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Infineon CoolMOS N-Channel MOSFET, 31.2 A Continuous Drain Current, 650 V Drain Source Voltage IPP65R110CFDAAKSA1

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Infineon CoolMOS N-Channel MOSFET, 31.2 A Continuous Drain Current, 650 V Drain Source Voltage IPP65R110CFDAAKSA1

Name: Infineon CoolMOS N-Channel MOSFET, 31.2 A Continuous Drain Current, 650 V Drain Source Voltage IPP65R110CFDAAKSA1
Brand: Infineon
SKU: 291727
Price: 5.31 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	4.57mm
Length	10.36mm
Model	IPP65R110CFDAAKSA1
Width	15.95mm
Mount Type	Surface
Series	CoolMOS
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-40°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	31.2A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	110mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	277.8W
Typical Gate Charge Qg @ Vgs	110nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	900mV

Key Features

Utilizes CoolMOS technology for superior thermal resistance.
Enhancement mode N-channel field-effect transistor.
Maximum power dissipation rated at 277.8 W.
Suitable for automotive applications with AEC-Q101 standard compliance.
Features low drain-source resistance of 110 mΩ for efficient conduction.
Forward voltage typical of 900 mV ensures power efficiency.
Supports operating temperatures from -40°C up to 150°C.
Pin count of 3 supports standard TO-220 mounting configurations.

Product Description

Infineon IPP65R110CFDAAKSA1 CoolMOS N-Channel MOSFET is a high-performance discrete semiconductor device designed for controlling electrical current in power electronics. This MOSFET offers a maximum continuous drain current of 31.2 A and a voltage rating of 650 V, making it suitable for a variety of industrial and automotive applications requiring high power efficiency and reliability.

The device features CoolMOS technology which enhances thermal resistance and ensures the MOSFET can handle rigorous operating conditions including temperatures ranging from -40°C to 150°C. Its surface mountable TO-220 package houses 3 pins, facilitating integration in compact circuits.

With a maximum power dissipation of 277.8 W and a low drain-source resistance of 110 mΩ, this MOSFET reliably minimizes energy loss and heat generation in power applications. The typical forward voltage of 900 mV further supports optimal conduction efficiency.

The product complies with the AEC-Q101 automotive standard, guaranteeing quality and durability in automotive electronics and demanding industrial environments. It is halogen-free according to IEC61249-2-23 norms and features Pb-free lead plating, aligning with environmental regulations.

CoolMOS technology with superior thermal resistance. Enhancement mode N-channel field-effect design. 3-pin TO-220 package, surface mount type. Maximum continuous drain current: 31.2 A. Drain-source voltage: 650 V. Maximum power dissipation: 277.8 W.

Operating temperature range from -40°C to 150°C. Low on-resistance of 110 mΩ to optimize power efficiency. AEC-Q101 automotive standard compliant. Halogen-free with Pb-free lead plating.

This MOSFET is suitable for industrial electronics manufacturing, automotive electronic control units, power management circuits, and other applications requiring high reliability and energy efficiency. It supports the design and development of high-performance power converters, inverters, and switching power supplies.

Discover expert-grade MOSFETs like this IPP65R110CFDAAKSA1 model in the Electronics & Electricals category at EnvMart for professional industrial and commercial applications.