onsemi N-Channel Power MOSFET 268A 40V Enhancement Mode 5-Pin DFN Surface Mount Package NVMFS5C420NWFT1G

onsemi NVMFS5C420NWFT1G is a high-performance N-Channel Power MOSFET optimized for demanding power switching and amplification tasks in automotive and industrial electronics. It features a compact 5-pin DFN surface mount package, measuring 6.3 mm in length, 5.3 mm in height, and 1.1 mm in width, enabling efficient board space utilization.

This MOSFET supports a maximum continuous drain current of 268 A and a maximum drain-to-source voltage of 40 V, making it suitable for high current and moderate voltage applications. The device benefits from a low on-resistance (Rds(on)) of 1.1 milliohms, minimizing conduction losses and improving overall efficiency.

The maximum power dissipation rating of 150 W allows for robust thermal management and reliable operation under heavy loads. It is rated to operate within a wide temperature range from -55°C up to 175°C, thus providing flexibility in harsh environmental conditions.

Typical gate charge is 82 nanocoulombs at gate-to-source voltage, reducing gate-driving losses and supporting faster switching speeds. The device has a maximum gate-to-source voltage rating of 20 V, ensuring stability and protection at the gate terminal. Its forward voltage of 1.2 V supports efficient conduction during switching cycles.

This MOSFET is AEC-Q101 qualified and PPAP capable, certifying its compliance with automotive industry standards and suitability for automotive applications requiring high reliability and quality. While not meeting specific automotive standards beyond AEC-Q101, it is well suited for demanding industrial, manufacturing, and power control applications.

The device is ideal for usage in power management systems, motor drives, power conversion circuits, and any application requiring a reliable, high-current, low-voltage switching transistor in a compact surface mount form factor.

This MOSFET features a maximum continuous drain current of 268 A. The device supports a maximum drain-to-source voltage of 40 V. Includes low Rds(on) of 1.1 mΩ to minimize conduction losses. Has a maximum power dissipation rating of 150 W for high thermal performance.

Operates reliably in temperatures ranging from -55°C to 175°C. Designed for surface mount applications with a 5-pin DFN package measuring 6.3 mm length by 5.3 mm height by 1.1 mm width. Typical gate charge is 82 nC at Vgs, reducing driver losses effectively.

Maximum gate-to-source voltage rating of 20 V ensures robust gate drive control. Forward voltage of 1.2 V supports efficient switching performance. AEC-Q101 qualification indicates suitability for automotive and other demanding industrial applications.

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