STMicroelectronics FDmesh N-Channel Power MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220 STP11NM60ND

STMicroelectronics STP11NM60ND is a high-performance FDmesh™ N-Channel Power MOSFET designed with enhancement mode technology, capable of handling a maximum continuous drain current of 10 A and a maximum drain source voltage of 600 V. Encapsulated in a TO-220 package, it is ideal for through-hole mounting, facilitating maintenance and replacement in industrial and electronic assemblies.

This MOSFET offers a low maximum drain source resistance (0.45 Ω), reducing power losses and improving efficiency in power conversion and switching applications. The device supports a maximum power dissipation of 90 W, making it suitable for demanding load conditions and robust thermal environments.

It operates reliably within a wide temperature range from -55°C to 150°C, ensuring durability in various industrial, automotive, and commercial electronics applications. With a typical gate charge of 30 nC at a gate-source voltage, it enables fast switching speeds crucial for modern power management circuits.

The device features a 3-pin configuration and a gate source voltage rating of ±25 V, providing flexibility in gate drive circuits. Its compact size with dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width allows for efficient use of PCB space without compromising thermal or electrical performance.

Applications for the STP11NM60ND include power supplies, motor control, industrial automation, and other power electronics systems requiring reliable, efficient power transistor components. It supports through-hole mounting techniques preferred in legacy and prototyping environments.

Mounting is through hole with a TO-220 package type ensuring easy integration. The device features a low maximum drain source resistance (Rds) of 0.45 Ω for efficient conduction. Capable of operating between -55°C and 150°C for robust industrial use.

Typical gate charge is 30 nC at Vgs, enabling fast switching. Maximum power dissipation rating of 90 W supports high load applications. Equipped with a 3-pin configuration optimizing connectivity and control. Maximum gate source voltage ranges from -25 V to +25 V ensuring operational versatility.

Compact dimensions with length 10.4 mm, width 4.6 mm, and height 15.75 mm support space-saving designs. Explore a range of Power MOSFETs and semiconductors at EnvMart for industrial, HVAC, and commercial electronics applications.