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onsemi N-Channel MOSFET 150 V 37.2 A 8-Pin WDFN Surface Mount Low Rds(on) Enhancement Mode NTTFS022N15MC

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onsemi N-Channel MOSFET 150 V 37.2 A 8-Pin WDFN Surface Mount Low Rds(on) Enhancement Mode NTTFS022N15MC

Name: onsemi N-Channel MOSFET 150 V 37.2 A 8-Pin WDFN Surface Mount Low Rds(on) Enhancement Mode NTTFS022N15MC
Brand: onsemi
SKU: 291452
Price: 2.07 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	3.4mm
Length	3.4mm
Model	NTTFS022N15MC
Width	800μm
Mount Type	Surface
Series	NTTFS
Maximum Operating Temperature	175°C
Package Type	WDFN
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	37.2A
Maximum Drain Source Voltage Vds	150V
Maximum Drain Source Resistance Rds	22mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	71.4W
Typical Gate Charge Qg @ Vgs	17nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

Low RDS(on) value of 22 milliohms minimizes conduction losses.
Compact surface mount design with 3.4 mm x 3.4 mm dimensions.
Enhancement mode channel provides efficient switching performance.
Maximum power dissipation of 71.4 W supports robust operation.
Wide operating temperature range from -55°C to 175°C for industrial use.
Low forward voltage of 1.2 V and low gate charge enhances driver efficiency.
Supports a maximum gate-source voltage of 30 V.
Pin count of 8 in a WDFN package suitable for compact PCB layouts.

Product Description

onsemi NTTFS022N15MC is an industrial-grade N-Channel MOSFET designed for efficient power management in electronic circuits with a surface mount 8-pin WDFN package measuring 3.4 mm by 3.4 mm. This device supports a maximum continuous drain current of 37.2 A and can withstand a drain-source voltage up to 150 V, making it suitable for high-performance switching applications.

Featuring a low on-resistance (RDS(on)) of 22 milliohms, this MOSFET minimizes conduction losses, thereby improving energy efficiency and reducing heat generation. The enhancement mode channel type provides reliable switching with a forward voltage of only 1.2 V, optimizing conduction performance. Its typical gate charge of 17 nC at the gate-source voltage enables faster switching with reduced driver losses.

Capable of dissipating up to 71.4 W of power, the part supports demanding industrial environments with a wide temperature tolerance from -55°C to 175°C. These thermal characteristics allow usage in rigorous HVAC, manufacturing, and power supply applications. The compact WDFN package gives a low-profile footprint, making it an ideal choice for dense printed circuit board designs in automotive electronics, power management, and other electronic component assemblies.

Its 8-pin configuration supports surface mounting for streamlined assembly. Despite lacking specific automotive standard compliance, the MOSFET meets industrial durability and electronic component standards to ensure effective performance in semiconductors category applications.

Low RDS(on) of 22 mΩ for reduced conduction losses. Compact 8-pin WDFN package for surface mount PCB designs. Wide operating temperature range of -55°C to 175°C. Maximum power dissipation rating of 71.4 W. Handles continuous drain current up to 37.2 A and drain-source voltage up to 150 V.

Typical gate charge of 17 nC at Vgs enhances switching efficiency. Maximum gate-source voltage of 30 V supports high-voltage control. Suitable for use in industrial, HVAC, manufacturing, and power supply systems. Explore more N-Channel MOSFETs and advanced discrete semiconductor components on EnvMart to meet demanding electronics design requirements.