Infineon CoolMOS P7 N-Channel MOSFET, 8 A, 800 V Enhancement Mode, 3-Pin TO-252 IPD80R600P7ATMA1

Infineon IPD80R600P7ATMA1 is a CoolMOS P7 N-Channel MOSFET designed with a maximum continuous drain current of 8 amperes and a maximum drain-source voltage rating of 800 volts. Housed in a compact 3-pin TO-252 surface mount package, this device is ideally suited for high-efficiency flyback power supply applications, including adapters, chargers, LED drivers, audio switch mode power supplies (SMPS), and auxiliary and industrial power circuits.

This MOSFET series offers approximately 0.6% efficiency improvements compared to its predecessors, delivering 2°C to 8°C lower operational temperature under typical flyback conditions. The reduced switching losses and improved DPAK RDS(on) enable designers to achieve higher power densities and reduced thermal management requirements.

The device features a maximum power dissipation of 60 watts, a maximum gate-source voltage of 20 volts, and typical gate charge of 20 nanocoulombs at Vgs. Its robust operating temperature range from -55°C up to 150°C supports demanding industrial environments.

The IPD80R600P7ATMA1 MOSFET helps lower bill of material costs and simplifies assembly processes due to its easy drivability and enhanced production yield from reduced ESD failure rates.

Physical dimensions measuring 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height allow convenient surface mounting in space constrained layouts. Although this device does not have specific automotive approval standards, it is engineered for industrial power applications requiring high reliability.

Up to 0.6% efficiency gain over previous generation MOSFETs. Lower MOSFET temperature by 2°C to 8°C under typical flyback operation. Maximum continuous drain current of 8 A and drain-source voltage of 800 V. Compact TO-252 3-pin surface mount package.

Maximum power dissipation of 60 W. Typical gate charge of 20 nC at Vgs and maximum gate-source voltage of 20 V. Wide operating temperature range from -55°C to 150°C. Enhancement mode channel type for efficient switching performance.

Designed for flyback applications, adapters, LED drivers, and industrial power.

This Infineon MOSFET is a reliable power semiconductor for industrial, commercial, and electronic component applications. Browse EnvMart for related semiconductor devices and discrete MOSFETs from Infineon and other leading brands.