Infineon OptiMOS N-Channel MOSFET 119 A, 40 V, Low Rds(on) 2.6 mΩ, 8-Pin TDSON BSC026N04LSATMA1

Infineon BSC026N04LSATMA1 is a high-performance OptiMOS N-Channel MOSFET designed for power switching applications, supporting a maximum continuous drain current of 119 A and a drain-source voltage of 40 V.

Its low on-resistance of 2.6 mΩ ensures minimal conduction losses, making it highly efficient for DC-DC converters and synchronous rectification in power supplies.

This MOSFET is housed in an 8-pin TDSON package suitable for surface mounting, with dimensions of 5.35 mm length, 6.1 mm width, and 1.2 mm height, facilitating compact circuit designs.

Operating reliably between -55°C and 150°C, it offers robust thermal performance, suitable for automotive power modules and motor-driver half-bridge circuits requiring low conduction loss and high switching efficacy.

With a typical gate charge of 45 nC and a gate-source voltage rating of 20 V, it provides excellent switching characteristics and robust drive margin. The forward voltage of 1 V is considered in power stage loss calculations to optimize efficiency.

Applications include high-current DC-DC converters, automotive power switching modules, motor control, and compact surface-mount power assemblies. Supports a maximum continuous drain current of 119 amperes. Maximum drain-source voltage rated at 40 volts ensuring robust performance.

Low drain-source resistance of 2.6 milliohms reduces conduction losses. Operates within a temperature range from -55°C to 150°C for extended reliability. 8-pin TDSON package designed for surface mounting. Typical gate charge of 45 nanocoulombs minimizes switching delay and energy.

Power dissipation capability of 63 watts supports high thermal management. Forward voltage drop of 1 volt suitable for power stage design optimizations. Gate-source voltage tolerance up to 20 volts for robust driving signals.

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