Infineon HEXFET N-Channel MOSFET, 119 A, 40 V, Surface Mount TO-252, 3-Pin IRFR4104TRPBF

Infineon IRFR4104TRPBF HEXFET N-Channel MOSFET is a state-of-the-art power MOSFET designed for high current and voltage applications. This device combines advanced manufacturing technology with an ultra low on-resistance per silicon area, enabling it to deliver exceptional efficiency and reliability.

Its robust 3-pin TO-252 surface mount package allows for compact, space-saving placement on printed circuit boards, making it ideal for industrial, automotive, and electronics manufacturing applications requiring high current switching and power dissipation.

The MOSFET supports continuous drain current up to 119 A with a maximum drain-source voltage rating of 40 V, suitable for various power conversion, motor control, and power supply circuit requirements. Its maximum power dissipation capability of 140 W ensures durability under demanding thermal conditions.

The device is designed to operate across a broad temperature range from -55°C to 175°C, making it highly reliable in harsh environments. The low gate charge of 89 nC facilitates fast switching speeds, contributing to energy-efficient operation in switching regulators, inverters, and DC-DC converters.

With a gate-source voltage maximum of 20 V and a low on-resistance of 5.5 mΩ, the IRFR4104TRPBF offers optimized switching characteristics, reduced losses, and enhanced performance consistency.

This MOSFET is particularly well-suited for applications in industrial automation, power management in electronic devices, automotive electronics systems where high efficiency and reliable power control are critical.

Delivers maximum continuous drain current of 119 A ensuring high current capacity. Operates at maximum drain-source voltage of 40 V suitable for power switching applications. Surface mount TO-252 package supports ease of PCB mounting and compact design.

Ultra low on-resistance of 5.5 mΩ reduces conduction losses effectively. Maximum power dissipation rating of 140 W ensures robust thermal handling. Wide operating temperature range from -55°C to 175°C offers excellent thermal stability.

Designed with 3 pins supporting efficient connectivity and mounting. Maximum gate-source voltage limit is 20 V allowing reliable gate control. Typical gate charge of 89 nC enables fast switching performance. Applications include power management, industrial electronics, and automotive systems.

Choose Infineon MOSFETs for advanced semiconductor solutions delivering power efficiency and durability for your industrial, automotive, and electronic circuit needs. Browse related semiconductor products at EnvMart for comprehensive selections.