Infineon CoolMOS N-Channel MOSFET, 7.2 A, 650 V, 3-Pin TO-220 IPA65R1K0CEXKSA1

Infineon IPA65R1K0CEXKSA1 CoolMOS N-Channel MOSFET is a high-performance power semiconductor designed using Infineon's pioneering super junction (SJ) technology. This device delivers exceptional switching speed with very low losses, achieved through extremely low figure of merit (FOM) combining Rds(on) and gate charge parameters.

The MOSFET supports a maximum continuous drain current of 7.2 A and can withstand drain-source voltages up to 650 V, making it suitable for a wide range of industrial and commercial power conversion, motor control, and power supply applications. It comes in a 3-pin TO-220 package, optimized for through-hole mounting with dimensions measuring approximately 10.65 mm in length, 29.75 mm in height, and 4.9 mm in width, providing effective heat dissipation capacity of up to 68 W.

The device features a low typical gate charge of 15.3 nC at Vgs, enabling fast and efficient switching, which reduces energy loss and enhances overall system efficiency. It is rated for a maximum gate-source voltage of 20 V and offers a forward voltage of 900 mV, further supporting effective power management in electronic circuits. Its operating temperature range from -55°C to 150°C ensures reliable performance under harsh environmental conditions.

The CoolMOS series by Infineon is halogen-free and utilizes Pb-free plating, aligning with current environmental and regulatory standards. This MOSFET is ideal for applications in industrial automation, power supplies, renewable energy inverters, and automotive electronics where high efficiency and reliability are paramount.

Designed for ease of use, this device combines high commutation ruggedness with an optimal cost-to-performance ratio. Superjunction MOSFET technology ensures low losses and high efficiency. Maximum continuous drain current of 7.2 A for robust power handling.

650 V maximum drain-source voltage suitable for high voltage applications. Through-hole mount type for easy PCB integration. Low typical gate charge of 15.3 nC at Vgs, enabling fast switching. Maximum power dissipation of 68 W for reliable thermal performance.

Wide operating temperature range from -55°C to 150°C. Forward voltage of 900 mV enhances switching efficiency. 3-pin TO-220 package with dimensions optimized for cooling and installation. Lead-free plating and halogen-free mold compound support environmental compliance.

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