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Infineon 800V CoolMOS P7 N-Channel MOSFET, 6 A, 800 V Enhancement Mode, 3-Pin TO-252 IPD80R900P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPD80R900P7ATMA1 |
| Mount Type | Surface |
| Series | 800V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports moderate load currents with a maximum drain current of 6 A.
- Features low on-resistance of 900mΩ to minimize conduction losses.
- Has a maximum power dissipation rating of 45 W for thermal durability.
- Equipped with a TO-252 surface mount package for compact PCB integration.
- Operates reliably from -55°C to 150°C for industrial temperature ranges.
- Enables efficient switching with a typical gate charge of 15 nC.
- Gate-source voltage tolerance up to ±20 V supports common driver voltages.
- Designed for power supply, inverter, and motor drive applications.
Product Description
Infineon IPD80R900P7ATMA1 800V CoolMOS P7 N-Channel MOSFET is a high-performance semiconductor device designed for power conversion and switching applications in industrial and power-electronics environments. It features a maximum continuous drain current of 6 A and supports a maximum drain-source voltage of 800 V, making it suitable for high-voltage systems.
This enhancement mode MOSFET comes in a TO-252 surface mount package that optimizes board space usage. The device exhibits a low maximum drain-source resistance of 900 milliohms, which reduces conduction losses and improves efficiency under load. It is rated for a maximum power dissipation of 45 W, allowing it to handle substantial thermal loads in demanding conditions.
The device operates effectively across a wide temperature range, from -55°C to 150°C, ensuring reliable performance in harsh industrial environments. The typical gate charge of 15 nC enables fast switching response, while the gate-source voltage range up to ±20 V allows flexibility with various driver circuits.
This MOSFET is particularly suited for use in high-voltage power supplies, switch-mode power devices, industrial inverter front-ends, and high-voltage motor drive circuits. Its compact surface mount design supports efficient assembly on PCBs for modern electronic equipment.
Supports 6 A continuous drain current for moderate power applications. 800 V drain-source voltage rating for high-voltage system compatibility. Low on-resistance of 900mΩ minimizes power loss and heat generation. Compact TO-252 surface mount package for space-saving PCB design.
Wide operating temperature range from -55°C to 150°C ensures robust functionality. Typical gate charge of 15 nC allows quick gate drive response. Gate voltage tolerance of ±20 V accommodates common driver requirements. Ideal for industrial, power supply, inverter, and motor drive applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 A, making it suitable for moderate power applications.
This MOSFET has a maximum drain-source voltage rating of 800 V, allowing compatibility with high-voltage systems.
It features a low on-resistance of 900 mΩ, which helps to minimize conduction losses during operation.
The device is packaged in a TO-252 surface mount package, which optimizes board space usage for PCB integration.
It operates reliably within a temperature range from -55°C to 150°C, making it suitable for harsh industrial environments.
The typical gate charge is 15 nC, allowing for efficient and fast switching response.
This model has a maximum power dissipation rating of 45 W, enabling it to handle substantial thermal loads.
The gate-source voltage tolerance is up to ±20 V, which accommodates common driver circuit requirements.
The Infineon IPD80R900P7ATMA1 has a pin count of 3, suitable for its surface mount design.
This device is an N-channel MOSFET, designed for enhancement mode operation.
It is particularly suited for power supply, inverter, and motor drive applications in industrial settings.
The country of origin for this MOSFET is India.
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