Infineon Dual OptiMOS 2 N-Channel MOSFET 40 A 25 V Enhancement 8-Pin TISON-8 BSC0910NDIATMA1

Infineon BSC0910NDIATMA1 Dual OptiMOS 2 N-Channel MOSFET is a high-performance semiconductor device offering a continuous drain current of 40 amperes and maximum drain-source voltage of 25 volts. Packaged in a compact 8-pin TISON-8 surface mount form factor, it is designed for demanding power switching and voltage regulation tasks.

This dual transistor MOSFET operates in enhancement mode and integrates a monolithic Schottky-like diode to enhance switching efficiency and reduce losses during conduction. The device has a very low Rds(on) of 5.9 milliohms, contributing to energy savings and thermal management in compact designs.

The maximum power dissipation rating of 2.5 watts coupled with an operating temperature range from -55°C to 150°C makes this MOSFET suitable for harsh industrial, computing, and automotive environments where reliability is critical. The typical gate charge of 23 nC at a gate-source voltage of 10 V supports high-speed switching applications.

Measuring 5 mm by 6 mm by 1.1 mm, the surface-mount package facilitates flexible and space-efficient PCB layouts. This device complies with environmental standards including RoHS and IEC61249-2-21, and is JEDEC certified. Its Pb-free lead plating ensures environmentally friendly assembly.

The Infineon OptiMOS 2 series range is engineered to meet the increasing demands of next-generation computing systems, power supplies, and industrial control systems requiring high energy efficiency and power density.

This MOSFET includes a dual transistor configuration for increased performance and flexibility. It features a monolithic integrated Schottky-like diode for reduced switching losses. RoHS compliant with Pb-free lead plating for environmental standards adherence.

Optimized for use in high-performance buck converter circuits and power management modules. Designed for surface mounting in compact PCB layouts, supporting robust industrial applications. Temperature rated for operation from -55°C to 150°C ensuring durability in extreme environments.

Complies with industry standards IEC61249-2-21 and JEDEC for quality assurance.

This MOSFET is suitable for use in industrial equipment, computing power supplies, telecommunications infrastructure, and automotive electronics. For further product details, Datasheets and technical documents are available to assist engineers in design and integration.

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