Infineon OptiMOS-T2 N-Channel MOSFET 60 V 80 A Enhancement Mode 3-Pin TO-220 IPP80N06S407AKSA2

Infineon IPP80N06S407AKSA2 is part of the OptiMOS-T2 series, featuring an N-Channel Enhancement MOSFET designed for high-efficiency power management. With a maximum continuous drain current of 80 A and a maximum drain-source voltage of 60 V, it is well-suited for industrial, electronic, and power conversion applications.

This device is housed in a TO-220 package facilitating easy through-hole mounting and effective heat dissipation. Its low drain-source resistance of 7.1 mΩ improves voltage efficiency, while its typical gate charge of 56 nC enables fast switching performance essential for high-frequency operations.

The MOSFET supports operating temperatures ranging from -55°C to 150°C, making it reliable in harsh industrial environments. It also supports a maximum power dissipation of 79 W, reflecting suitability for high power loads.

The maximum gate-source voltage of 20 V ensures safe gate operation, while the forward voltage of 1.3 V helps in reducing power loss during conduction. The component is rigorously tested with 100% avalanche testing to ensure durability under transient voltage spikes.

This power transistor complies with RoHS directives, emphasizing environmentally safe manufacturing practices. Typical applications include power supply circuits, motor drives, and switching regulators in automotive, industrial, and consumer electronics domains.

Low on-resistance of 7.1 mΩ for enhanced efficiency. 3-Pin TO-220 package for effective mounting and heat management. Wide temperature range operation from -55°C to 150°C. Max power dissipation rating of 79 W for demanding power applications.

Fast switching enabled by 56 nC typical gate charge. RoHS compliant green product ensuring environmental safety. Explore the full range of Infineon MOSFETs and power transistors at EnvMart for industrial-grade electronic components.

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