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Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V Enhancement Mode, 3-Pin TO-263 IPB80N06S2H5ATMA2

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPB80N06S2H5ATMA2
Mount Type Surface
Series OptiMOS
Package Type TO-263
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 80A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 5.2mΩ
Channel Mode Enhancement

Key Features

  • The MOSFET features enhancement mode channel operation for efficient switching performance.
  • It supports a maximum continuous drain current rating of 80 A under standard conditions.
  • The device is housed in a TO-263 surface mount package with 3 pins suitable for compact PCB layouts.
  • The maximum drain-source resistance (Rds) is 5.2 milliohms, enabling low conduction losses.
  • OptiMOS series offers high energy efficiency and is suitable for advanced voltage regulation applications.
  • The product is rated for an operating temperature up to 175°C for robustness in demanding environments.
  • This MOSFET is not automotive standard qualified but undergoes stringent quality and avalanche testing.

Product Description

The Infineon IPB80N06S2H5ATMA2 is a high-performance OptiMOS N-Channel MOSFET designed for demanding electronic applications requiring reliable power switching and efficiency. This device supports a maximum continuous drain current (Id) of 80 amperes and a maximum drain-source voltage (Vds) of 55 volts, making it suitable for a wide range of power management and voltage regulation use cases.

Featuring an enhancement mode channel, this MOSFET operates efficiently with low on-resistance, indicated by its maximum drain-source resistance (Rds) of 5.2 milliohms. The component comes in a three-pin TO-263 surface-mount package, facilitating easy integration into compact circuit designs and contributing to excellent thermal management.

The OptiMOS series emphasizes energy efficiency and power density, meeting the needs of modern computing and industrial electronics where space and performance are critical. With a rugged construction and an ability to operate at temperatures up to 175°C, this component ensures reliability in challenging industrial, laboratory, HVAC, and manufacturing environments.

While not qualified to automotive standards, the part undergoes 100% avalanche testing for robustness, enhancing its suitability for critical applications requiring resilience to electrical stress.

The device is ideal for use in power supplies, motor drives, DC-DC converters, and general power management circuits where efficient switching and heat dissipation are essential. The MOSFET features enhancement mode channel operation for efficient switching performance.

It supports a maximum continuous drain current rating of 80 A under standard conditions. The device is housed in a TO-263 surface mount package with 3 pins suitable for compact PCB layouts. Maximum drain-source resistance (Rds) is 5.2 milliohms, enabling low conduction losses.

Operates at high temperatures up to 175°C for enhanced durability. It is 100% avalanche tested for robustness against electrical surges. Suits applications in industrial electronics, manufacturing, laboratory equipment, and HVAC systems.

Consider the Infineon OptiMOS IPB80N06S2H5ATMA2 for efficient and reliable power switching solutions. Browse other high-quality semiconductor components and MOSFETs on EnvMart for comprehensive electronic system designs.

Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V Enhancement Mode, 3-Pin TO-263 IPB80N06S2H5ATMA2
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Frequently Asked Questions

The maximum continuous drain current for the Infineon IPB80N06S2H5ATMA2 is 80 A under standard conditions.

This MOSFET supports a maximum drain-source voltage of 55 V.

The maximum drain-source resistance (Rds) is 5.2 milliohms, which enables low conduction losses.

It is housed in a TO-263 surface mount package with 3 pins, suitable for compact PCB layouts.

The device operates at high temperatures up to 175°C, making it suitable for demanding environments.

No, this MOSFET is not automotive standard qualified but undergoes stringent quality and avalanche testing.

It features enhancement mode channel operation for efficient switching performance.

This model is suitable for applications in power supplies, motor drives, DC-DC converters, and general power management circuits.

The low on-resistance of 5.2 milliohms contributes to efficient power management and reduced heat generation during operation.

The Infineon IPB80N06S2H5ATMA2 is manufactured in India.

This model belongs to the OptiMOS series, which emphasizes energy efficiency and power density.

The TO-263 surface mount package facilitates easy integration into compact circuit designs and contributes to excellent thermal management.

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