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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB80N06S2H5ATMA2 |
| Mount Type | Surface |
| Series | OptiMOS |
| Package Type | TO-263 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 5.2mΩ |
| Channel Mode | Enhancement |
The Infineon IPB80N06S2H5ATMA2 is a high-performance OptiMOS N-Channel MOSFET designed for demanding electronic applications requiring reliable power switching and efficiency. This device supports a maximum continuous drain current (Id) of 80 amperes and a maximum drain-source voltage (Vds) of 55 volts, making it suitable for a wide range of power management and voltage regulation use cases.
Featuring an enhancement mode channel, this MOSFET operates efficiently with low on-resistance, indicated by its maximum drain-source resistance (Rds) of 5.2 milliohms. The component comes in a three-pin TO-263 surface-mount package, facilitating easy integration into compact circuit designs and contributing to excellent thermal management.
The OptiMOS series emphasizes energy efficiency and power density, meeting the needs of modern computing and industrial electronics where space and performance are critical. With a rugged construction and an ability to operate at temperatures up to 175°C, this component ensures reliability in challenging industrial, laboratory, HVAC, and manufacturing environments.
While not qualified to automotive standards, the part undergoes 100% avalanche testing for robustness, enhancing its suitability for critical applications requiring resilience to electrical stress.
The device is ideal for use in power supplies, motor drives, DC-DC converters, and general power management circuits where efficient switching and heat dissipation are essential. The MOSFET features enhancement mode channel operation for efficient switching performance.
It supports a maximum continuous drain current rating of 80 A under standard conditions. The device is housed in a TO-263 surface mount package with 3 pins suitable for compact PCB layouts. Maximum drain-source resistance (Rds) is 5.2 milliohms, enabling low conduction losses.
Operates at high temperatures up to 175°C for enhanced durability. It is 100% avalanche tested for robustness against electrical surges. Suits applications in industrial electronics, manufacturing, laboratory equipment, and HVAC systems.
Consider the Infineon OptiMOS IPB80N06S2H5ATMA2 for efficient and reliable power switching solutions. Browse other high-quality semiconductor components and MOSFETs on EnvMart for comprehensive electronic system designs.
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