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onsemi N-Channel MOSFET 75 A 650 V Enhancement, 3-Pin TO-247 FCH029N65S3-F155
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 5.1mm |
| Length | 15.9mm |
| Model | FCH029N65S3-F155 |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | FCH029N |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | These Devices are Pb-Free and are RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 29mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 463W |
| Typical Gate Charge Qg @ Vgs | 201nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Utilizes charge balance technology for low on-resistance and reduced gate charge.
- Enhancement mode channel type suitable for efficient switching applications.
- Maximum power dissipation of 463 W for high thermal performance.
- Operating temperature range from -55°C to 150°C for robust industrial use.
- Typical gate charge of 201 nC at Vgs = 20 V enhances switching speed.
- Maximum drain-source resistance of 29 mΩ reduces conduction losses.
- Forward voltage drop of 1.2 V for optimized efficiency.
- Package dimensions approximately 15.9 mm length, 21.1 mm width, and 5.1 mm height.
Product Description
The onsemi FCH029N65S3-F155 is a new, high-voltage N-Channel MOSFET designed with advanced charge balance technology to minimize conduction losses and enhance switching performance in power electronics applications. Featuring a maximum continuous drain current of 75 A and a voltage rating of 650 V, this device fits industry requirements for efficient power handling.
Its enhancement mode channel type ensures reliable switching with a maximum drain-source resistance of just 29 mΩ, decreasing overall power dissipation which is rated at 463 W. The MOSFET operates effectively over a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial environments including construction, manufacturing automation, and HVAC systems.
The device features a typical gate charge of 201 nC at 20 V gate voltage, facilitating fast gate switching and reduced switching losses. It is housed in a 3-pin TO-247 package with dimensions of approximately 15.9 mm length, 21.1 mm width, and 5.1 mm height, suitable for through-hole mounting and ensuring sturdy mechanical and thermal management.
Designed to be Pb-free and RoHS compliant, the FCH029N65S3-F155 supports environmentally conscious manufacturing processes. This MOSFET is ideal for use in power supply circuits, motor drivers, and other discrete semiconductor applications requiring efficient power control and thermal withstand capabilities.
Utilizes charge balance technology for low on-resistance and reduced gate charge. Enhancement mode channel for efficient and reliable switching. High power dissipation of 463 W supports thermal management. Wide operating temperature range from -55°C to 150°C.
Low typical gate charge of 201 nC enhances switching speed. Low Rds(on) of 29 mΩ minimizes conduction loss. Forward voltage of 1.2 V ensures efficiency. Compact TO-247 3-pin package dimensions optimize board space. Pb-free and RoHS compliant for environmental safety.
Through hole mount type for secure PCB connections.
Used extensively in electronic components, power & connectors, and semiconductor applications, this MOSFET delivers advanced performance for industrial, laboratory, HVAC, manufacturing, and power management solutions. Explore similar onsemi MOSFET products for tailored options in your design and production workflow.
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Frequently Asked Questions
The maximum continuous drain current for this model is 75 A.
This MOSFET has a maximum voltage rating of 650 V.
The typical gate charge at Vgs = 20 V is 201 nC.
The package dimensions are approximately 15.9 mm in length, 21.1 mm in width, and 5.1 mm in height.
The maximum power dissipation is rated at 463 W.
It operates effectively over a temperature range from -55°C to 150°C.
The maximum drain-source resistance is 29 mΩ.
This model uses a through-hole mounting type.
Yes, this device is Pb-free and RoHS compliant.
It is suitable for power supply circuits, motor drivers, and other discrete semiconductor applications requiring efficient power control.
The forward voltage drop is 1.2 V.
This model utilizes an N-channel type for efficient switching applications.
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