onsemi PowerTrench N-Channel MOSFET 2.7 A 100 V Enhancement Mode 3-Pin SOT-23 FDN8601

The onsemi FDN8601 PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor designed for switching and amplification applications in electronic circuits. It supports a continuous drain current of up to 2.7 amperes and features a maximum drain-source voltage of 100 volts, making it highly suitable for power management in various industrial, automotive, and commercial electronics.

This MOSFET is packaged in a small 3-pin SOT-23 form factor, providing a compact footprint ideal for surface mount technology. The device employs enhancement mode channel operation, ensuring efficient switching with minimal losses.

With a maximum drain-source resistance of 183 milliohms, the FDN8601 enables effective conduction and thermal performance, helping maintain low energy dissipation. Its power dissipation rating is 1.5 watts, allowing it to endure substantial electrical loads under proper thermal management.

The device operates reliably across a broad temperature spectrum from -55°C to 150°C, suitable for demanding environments in industrial automation, consumer electronics, and automotive systems. Package dimensions measure approximately 1.4 mm in length, 2.92 mm in width, and 940 micrometers in height, offering a compact and low-profile design.

A typical gate charge of 3 nanocoulombs at rated gate voltage promotes faster switching speeds, improving switching efficiency and reducing delays. The maximum gate-source voltage range is -20 V to +20 V, ensuring robust gate control without risking damage.

Forward voltage of 1.3 volts supports efficient conduction in power applications. The surface mount package type allows compatibility with automated manufacturing processes, enhancing assembly efficiency.

Part of onsemi’s PowerTrench series, the FDN8601 MOSFET is engineered for reliable, high-quality semiconductor performance in electronic component assemblies. Its versatile electrical specifications make it ideal for use in power supply circuits, voltage regulators, switching applications, and analog circuit designs.

Choose the onsemi FDN8601 for a balance of compactness, efficiency, and dependable operation in demanding semiconductor applications. Features enhancement mode channel operation for efficient switching. Exhibits a low maximum drain-source resistance of 183 milliohms.

Supports a maximum power dissipation of 1.5 watts for reliable performance. Operates within a temperature range from -55°C to 150°C. Compact package dimensions with length 1.4 mm, width 2.92 mm, and height 940 micrometers.

Typical gate charge of 3 nanocoulombs at specified gate voltage enhances switching speed. Maximum gate-source voltage tolerances of -20 V to +20 V ensure robust gate control. Forward voltage rating of 1.3 V for optimized forward conduction.

Designed for surface mount application supporting automated circuit assembly. Explore more on MOSFETs and power semiconductor components at EnvMart for your industrial and electronics manufacturing needs.