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onsemi PowerTrench N-Channel MOSFET 1.6 A 150 V Enhancement 3-Pin SOT-23 FDN86246

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 940μm
Length 1.4mm
Model FDN86246
Width 2.92mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 1.6A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 481mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.5W
Typical Gate Charge Qg @ Vgs 2.9nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 830mV

Key Features

  • PowerTrench technology ensures enhanced performance and reliability.
  • Maximum continuous drain current of 1.6 amperes for stable operation.
  • Maximum drain-source voltage rating of 150 volts for versatile applications.
  • Compact 3-pin SOT-23 package suitable for surface mounting and compact designs.
  • Low drain-source resistance of 481 milliohms minimizes power loss.
  • Operational temperature range from -55°C to +150°C for harsh environments.
  • Typical gate charge of 2.9 nanocoulombs enables fast switching.
  • Maximum gate-source voltage of -20 to +20 volts protects against voltage spikes.

Product Description

The onsemi FDN86246 is a PowerTrench® N-Channel MOSFET designed for discrete semiconductor applications requiring reliable and efficient switching capabilities. Rated for a maximum continuous drain current of 1.6 A and a drain-source voltage of 150 V, this device suits a broad range of industrial, consumer electronics, and power management applications.

Housed in a compact 3-pin SOT-23 package, the MOSFET is optimized for surface mounting with low profile and minimal PCB footprint. Its low maximum drain-source resistance of 481 milliohms and typical gate charge of 2.9 nC at Vgs provide high switching efficiency and low conduction losses, making it ideal for power-sensitive circuits.

Engineered to withstand operating temperatures from -55°C to 150°C, the FDN86246 ensures durability in demanding environmental conditions such as automotive, industrial, HVAC, and manufacturing control systems. The device supports gate-source voltages from -20 to +20 volts, offering protection against voltage transients to safeguard circuit integrity.

With a maximum power dissipation capability of 1.5 watts, it allows effective heat dissipation through proper PCB design and thermal management. Its precise physical dimensions - 1.4 mm length, 2.92 mm width, and 940 μm height - enable designers to integrate the component seamlessly into miniaturized assemblies.

PowerTrench® technology provides superior efficiency and reliability. High continuous drain current rating for stable operation. Supports high voltage applications up to 150 V. Compact 3-pin SOT-23 package for surface mounting and space saving.

Low on-resistance reduces power loss and heat generation. Wide operating temperature range for industrial and automotive environments. Fast switching enabled by low gate charge characteristics. Robust gate-source voltage rating safeguards against damage.

Moderate power dissipation supports efficient thermal control. Small footprint suitable for high-density PCB layouts.

This PowerTrench N-Channel MOSFET is applicable across electronics, power supplies, industrial controls, consumer devices, and automotive electronics where efficient switching and durability are paramount. For more electronic components, transistor devices, and discrete semiconductor solutions, explore EnvMart's comprehensive catalog.

onsemi PowerTrench N-Channel MOSFET 1.6 A 150 V Enhancement 3-Pin SOT-23 FDN86246
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.6 amperes.

The maximum drain-source voltage rating is 150 volts, making it suitable for high voltage applications.

It comes in a compact 3-pin SOT-23 package, optimized for surface mounting.

This model operates within a temperature range of -55°C to +150°C, suitable for harsh environments.

The maximum power dissipation capability of this MOSFET is 1.5 watts.

The typical gate charge is 2.9 nanocoulombs, which enables fast switching.

The maximum gate-source voltage rating is -20 to +20 volts, providing protection against voltage spikes.

The maximum drain-source resistance is 481 milliohms, which minimizes power loss.

The dimensions are 1.4 mm in length, 2.92 mm in width, and 940 μm in height.

This MOSFET is applicable in electronics, power supplies, industrial controls, consumer devices, and automotive electronics.

The channel type is N-Channel, designed for enhancement mode operation.

The country of origin for this product is India.

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