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onsemi UniFET N-Channel MOSFET 44 A 250 V Enhancement Mode 3-Pin TO-263 FDB44N25TM

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 4.83mm
Length 10.67mm
Model FDB44N25TM
Width 11.33mm
Mount Type Surface
Series UniFET
Maximum Operating Temperature 150°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 44A
Maximum Drain Source Voltage Vds 250V
Maximum Drain Source Resistance Rds 69mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 307W
Typical Gate Charge Qg @ Vgs 47nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.4V

Key Features

  • Offers a maximum continuous drain current of 44 amperes.
  • Features a low maximum drain-source resistance of 69 milliohms.
  • Supports a maximum drain-source voltage of 250 volts.
  • Boasts a maximum power dissipation of 307 watts for efficient thermal management.
  • Operates over a wide temperature range from -55°C to 150°C.
  • Includes a typical gate charge of 47 nanocoulombs at a gate-source voltage.
  • Built with enhancement mode channel type and N-channel conduction.
  • Designed with a TO-263 surface mount package for compact PCB layouts.

Product Description

onsemi FDB44N25TM UniFET is a high voltage N-Channel MOSFET transistor designed for efficient switching and power control applications. It features a 44 ampere maximum continuous drain current and a drain-source voltage rating of 250 volts, making it suitable for demanding power electronics tasks. The enhancement mode MOSFET is housed in a compact 3-pin TO-263 surface mount package with physical dimensions of 10.67 mm in length, 11.33 mm in width, and 4.83 mm in height.

This device offers superior switching performance due to its low maximum drain-source resistance of 69 milliohms and a maximum power dissipation capability of 307 watts. Its wide operating temperature range from -55°C to 150°C enables reliable use in harsh industrial and automotive environments.

The FDB44N25TM incorporates a typical gate charge of 47 nanocoulombs, facilitating fast switching speeds and reduced gate drive losses. The maximum gate-source voltage rating of 30 volts provides robustness against gate overstress. The built-in internal gate-source ESD diode enhances device reliability under surge conditions.

UniFET MOSFETs from onsemi are typically used in switching power converter circuits such as power factor correction (PFC), flat panel display power supplies, ATX power supplies, and electronic lamp ballasts. Their high avalanche energy strength and small on-state resistance contribute to energy-efficient designs in industrial, commercial, and consumer electronics applications.

Offers a maximum continuous drain current of 44 amperes. Features a low maximum drain-source resistance of 69 milliohms. Supports a maximum drain-source voltage of 250 volts. Boasts a maximum power dissipation of 307 watts for efficient thermal management.

Operates over a wide temperature range from -55°C to 150°C. Includes a typical gate charge of 47 nanocoulombs at a gate-source voltage. Built with enhancement mode channel type and N-channel conduction. Designed with a TO-263 surface mount package for compact PCB layouts.

Equipped with a maximum gate-source voltage rating of 30 volts. Physical dimensions include length 10.67 mm, width 11.33 mm, and height 4.83 mm. Explore a wide array of MOSFETs and semiconductors at EnvMart for industrial, automotive, and electronic component needs.

onsemi UniFET N-Channel MOSFET 44 A 250 V Enhancement Mode 3-Pin TO-263 FDB44N25TM
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Frequently Asked Questions

The maximum continuous drain current of the FDB44N25TM is 44 amperes.

This model supports a maximum drain-source voltage of 250 volts.

The physical dimensions of the TO-263 package are 10.67 mm in length, 11.33 mm in width, and 4.83 mm in height.

It boasts a maximum power dissipation of 307 watts, allowing for efficient thermal management.

The typical gate charge for this model is 47 nanocoulombs at a gate-source voltage.

The maximum gate-source voltage rating for this MOSFET is 30 volts.

This unit features a low maximum drain-source resistance of 69 milliohms.

It operates over a wide temperature range from -55°C to 150°C.

This model is built with an enhancement mode channel type and N-channel conduction.

It is typically used in switching power converter circuits, such as power factor correction, flat panel display power supplies, and ATX power supplies.

The FDB44N25TM has a pin count of 3.

The country of origin for this MOSFET is India.

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