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onsemi PowerTrench N-Channel MOSFET 36 A 100 V Enhancement 3-Pin TO-252 FDD86102
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD86102 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 44mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62W |
| Typical Gate Charge Qg @ Vgs | 13.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 800mV |
Key Features
- Maximum continuous drain current of 36 A ensures high current capacity for demanding circuits.
- Drain-source voltage rating of 100 V for robust operation in high voltage environments.
- Low drain-source resistance of 44 milliohms reduces conduction losses.
- Enhancement mode N-channel design for effective switching performance.
- Designed with PowerTrench technology for enhanced thermal and electrical efficiency.
- Compact TO-252 surface mount package with 3-pin configuration for easy PCB assembly.
- Maximum power dissipation up to 62 W enables handling of significant power loads.
- Operating temperature range from -55°C to 150°C suitable for harsh industrial conditions.
Product Description
onsemi FDD86102 PowerTrench N-Channel MOSFET is a semiconductor device designed for power switching and amplification in industrial electronics. It features a maximum continuous drain current of 36 A and can withstand a maximum drain-source voltage of 100 V, suitable for demanding electrical applications.
The MOSFET employs an enhancement mode N-channel device in a compact TO-252 package with three pins, optimized for surface mounting on printed circuit boards. Featuring advanced PowerTrench technology, it offers low on-resistance of 44 milliohms, resulting in high efficiency and lower heat generation.
It can dissipate up to 62 W of power and operates reliably within the industrial temperature range of -55°C to 150°C, making it suitable for use in automotive electronics, industrial control systems, power supplies, and motor drive circuits.
The device includes a typical gate charge of 13.4 nC, enabling fast switching for high-speed applications, and is protected with a maximum gate-source voltage rating of ±20 V. Its forward voltage is specified at 800 mV, ensuring efficient conduction during operation.
Physical dimensions of the MOSFET are 6.73 mm length, 6.22 mm width, and 2.39 mm height. The device does not carry automotive standards or approvals, focusing on general industrial and consumer electronics markets.
Maximum continuous drain current: 36 A. Drain-source voltage: 100 V. Drain-source resistance: 44 mΩ. Power dissipation: 62 W. Operating temperature range: -55°C to 150°C. Gate charge: 13.4 nC (typical). Gate-source voltage: ±20 V (max).
Package type: TO-252, surface mount. 3-pin configuration for easy PCB integration. Forward voltage: 800 mV.
This PowerTrench MOSFET from onsemi is well-suited for applications in power management, industrial electronics, automotive electronics, and other high-performance switching circuits. Explore more semiconductor devices and MOSFETs at EnvMart for your engineering and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 36 A, allowing for high current capacity in demanding circuits.
This model has a drain-source voltage rating of 100 V, making it suitable for high voltage applications.
The drain-source resistance is 44 milliohms, which helps reduce conduction losses.
It can dissipate up to 62 W, enabling it to handle significant power loads effectively.
The operating temperature range is from -55°C to 150°C, suitable for harsh industrial conditions.
This model comes in a TO-252 package type, designed for surface mounting on printed circuit boards.
The typical gate charge is 13.4 nC, which allows for fast switching in high-speed applications.
The maximum gate-source voltage rating is ±20 V, providing protection against voltage spikes.
The physical dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
It utilizes an enhancement mode N-channel design for effective switching performance.
This model is suitable for applications in automotive electronics, industrial control systems, power supplies, and motor drive circuits.
It is designed with PowerTrench technology, which enhances thermal and electrical efficiency.
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