onsemi PowerTrench N-Channel MOSFET, 29 A, 150 V Enhancement Mode, 3-Pin TO-263 FDB2572

onsemi FDB2572 PowerTrench N-Channel MOSFET is a robust semiconductor device designed for switching and amplification applications. Rated for a maximum continuous drain current of 29 A and a maximum drain-source voltage of 150 V, it provides excellent electrical performance in a compact TO-263 surface mount package.

This enhancement-mode MOSFET features a remarkably low drain-source resistance of 146 milliohms, enabling efficient power handling and minimal loss under high current loads. It is engineered to operate reliably in extreme temperature ranges from -55°C to 175°C, making it suitable for industrial, automotive (non-certified), and consumer electronic applications.

The device's typical gate charge of 26 nanocoulombs at the gate-source voltage ensures rapid switching, enhancing performance in power management circuits and DC-DC converters. The three-pin TO-263 package is optimized for surface mounting, offering compactness suitable for space-constrained board layouts.

With maximum gate-source voltage ratings of ±20 volts, the MOSFET protects against damaging voltage surges during operation. Physically, it measures 10.67 mm in length, 11.33 mm in width, and 4.83 mm in height, providing a balance between performance and PCB real estate.

This PowerTrench MOSFET is manufactured in China and does not have specific automotive certifications, although it is widely used in electronic power control, industrial automation, and consumer power supplies.

This MOSFET operates in enhancement mode with a surface mount TO-263 package. Maximum power dissipation rated at 135W ensures reliable operation under load. Features extremely low drain-source resistance of 146 milliohms for energy-efficient switching.

Designed for use from -55°C to a maximum operating temperature of 175°C, suitable for harsh environments. Three-pin configuration allows straightforward integration in electronic circuits. Typical gate charge of 26nC at gate-source voltage supports high switching speeds.

Maximum gate-source voltage of ±20V protects against voltage spikes. Compact dimensions: 10.67mm length, 11.33mm width, and 4.83mm height allow space-saving designs. Manufactured in China, conforming to PowerTrench technology standards without automotive certification.

Explore similar Power MOSFETs and discrete semiconductors in our Electronics & Electricals section to find compatible components for your industrial, automotive, or consumer device applications.