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| Country of Origin | Germany |
|---|---|
| Brand | DiodesZetex |
| Height | 1.7mm |
| Length | 6.7mm |
| Model | ZHB6790TA |
| Width | 7.3mm |
| Mount Type | Surface |
| Series | ZHB67 |
| Maximum Operating Temperature | 150°C |
| Package Type | Surface Mount |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Maximum Collector Emitter Voltage Vceo | 40V |
| Minimum DC Current Gain hFE | 150 |
| Transistor Polarity | NPN + PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 50V |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Full Bridge |
| Maximum Transition Frequency ft | 150MHz |
DiodesZetex ZHB6790TA transistor is designed as a quad transistor in a full H-bridge configuration featuring NPN and PNP polarities. Packaged in an 8-pin surface mount type, this device supports a maximum DC collector current of 2 A and withstands collector-emitter voltages up to 40 V, making it suitable for a variety of industrial and electronic applications including switching, amplification, and motor control.
This transistor's robust characteristics include a maximum power dissipation rating of 2 W, maximum collector-base voltage of 50 V, and emitter-base voltage of 5 V. It performs reliably across a broad temperature range from -55°C up to 150°C and offers a maximum transition frequency of 150 MHz, suited for high-speed electronic circuits.
Its minimum DC current gain is 150, which ensures efficient signal amplification within discrete semiconductor systems. The compact 8-pin surface mount package has a length of 6.7 mm, width of 7.3 mm, and slim height of 1.7 mm, allowing for space-saving designs in printed circuit boards.
Manufactured in Germany, the ZHB6790TA series from DiodesZetex meets quality and durability requirements for professional electrical and industrial applications. Surface mount package with 8 pins for compact installation.
Maximum collector current: 2 amperes. Maximum collector-emitter voltage: 40 volts. Quad transistor H-bridge full bridge configuration. Operating temperature range: -55°C to 150°C. Maximum power dissipation of 2 watts. High switching frequency capability at 150 MHz.
Minimum DC current gain (hFE) of 150. Physical size: 6.7 mm x 7.3 mm x 1.7 mm. Device manufactured in Germany.
This transistor is ideal for use in electronic components assembly, power control modules, and various semiconductor circuitry designs in industrial, HVAC, automotive, and manufacturing sectors.
Explore the full range of Bipolar Transistors and discrete semiconductors at EnvMart to find compatible components for your projects.
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