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DiodesZetex Quad Transistor H-Bridge Full Bridge NPN + PNP Surface Mount 8-Pin, 2 A, 40 V ZHB6790TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin Germany
Brand DiodesZetex
Height 1.7mm
Length 6.7mm
Model ZHB6790TA
Width 7.3mm
Mount Type Surface
Series ZHB67
Maximum Operating Temperature 150°C
Package Type Surface Mount
Minimum Operating Temperature -55°C
Pin Count 8
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 150
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 2A
Transistor Configuration Full Bridge
Maximum Transition Frequency ft 150MHz

Key Features

  • Surface mount package with 8 pins ensures easy PCB assembly and compact design.
  • Maximum DC collector current of 2 amperes suitable for medium power switching applications.
  • Quad transistor H-bridge configuration provides efficient full bridge drive capabilities.
  • High maximum collector-base voltage of 50 V and emitter-base voltage of 5 V.
  • Operates over a wide temperature range from -55°C to 150°C.
  • Maximum power dissipation up to 2 watts for reliable operation.
  • Maximum transition frequency of 150 MHz suitable for high-speed switching.
  • Minimum DC current gain (hFE) of 150 enhances amplification performance.

Product Description

DiodesZetex ZHB6790TA transistor is designed as a quad transistor in a full H-bridge configuration featuring NPN and PNP polarities. Packaged in an 8-pin surface mount type, this device supports a maximum DC collector current of 2 A and withstands collector-emitter voltages up to 40 V, making it suitable for a variety of industrial and electronic applications including switching, amplification, and motor control.

This transistor's robust characteristics include a maximum power dissipation rating of 2 W, maximum collector-base voltage of 50 V, and emitter-base voltage of 5 V. It performs reliably across a broad temperature range from -55°C up to 150°C and offers a maximum transition frequency of 150 MHz, suited for high-speed electronic circuits.

Its minimum DC current gain is 150, which ensures efficient signal amplification within discrete semiconductor systems. The compact 8-pin surface mount package has a length of 6.7 mm, width of 7.3 mm, and slim height of 1.7 mm, allowing for space-saving designs in printed circuit boards.

Manufactured in Germany, the ZHB6790TA series from DiodesZetex meets quality and durability requirements for professional electrical and industrial applications. Surface mount package with 8 pins for compact installation.

Maximum collector current: 2 amperes. Maximum collector-emitter voltage: 40 volts. Quad transistor H-bridge full bridge configuration. Operating temperature range: -55°C to 150°C. Maximum power dissipation of 2 watts. High switching frequency capability at 150 MHz.

Minimum DC current gain (hFE) of 150. Physical size: 6.7 mm x 7.3 mm x 1.7 mm. Device manufactured in Germany.

This transistor is ideal for use in electronic components assembly, power control modules, and various semiconductor circuitry designs in industrial, HVAC, automotive, and manufacturing sectors.

Explore the full range of Bipolar Transistors and discrete semiconductors at EnvMart to find compatible components for your projects.

DiodesZetex Quad Transistor H-Bridge Full Bridge NPN + PNP Surface Mount 8-Pin, 2 A, 40 V ZHB6790TA
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Frequently Asked Questions

The maximum DC collector current for the ZHB6790TA is 2 amperes.

This transistor can withstand a maximum collector-emitter voltage of 40 volts.

It operates over a wide temperature range from -55°C to 150°C.

The maximum power dissipation for the ZHB6790TA is 2 watts.

It has a maximum transition frequency of 150 MHz, suitable for high-speed switching applications.

The dimensions of the surface mount package are 6.7 mm in length, 7.3 mm in width, and 1.7 mm in height.

This model features a quad transistor H-bridge configuration with NPN and PNP polarities.

The minimum DC current gain (hFE) for the ZHB6790TA is 150, enhancing its amplification performance.

The maximum collector-base voltage for this model is 50 volts.

The maximum emitter-base voltage (VEBO) for the ZHB6790TA is 5 volts.

This transistor is manufactured in Germany.

It is suitable for a variety of applications including switching, amplification, and motor control in industrial and electronic settings.

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