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DiodesZetex Silicon Junction Switching Diode 3 A 200 V Surface Mount SMC ES3D-13-F
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 2.3mm |
| Length | 7.11mm |
| Model | ES3D-13-F |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SMC |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 900mV |
| Peak Reverse Recovery Time trr | 25ns |
| Maximum Forward Current If | 3A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Key Features
- Surface mount type with SMC package for PCB assembly.
- Maximum forward voltage of 900 mV for efficient switching performance.
- Wide operating temperature range from -55°C to 150°C.
- Fast peak reverse recovery time of 25 ns to reduce switching losses.
- Pin count of 2 for compact circuit integration.
- Robust construction suitable for industrial electronic applications.
- Peak non-repetitive forward surge current rating of 100 A allows handling transient overloads.
Product Description
DiodesZetex ES3D-13-F is a high-quality silicon junction switching diode designed for reliable industrial and electronic component applications. It features a single diode configuration with a maximum forward current capability of 3 A and can withstand peak repetitive reverse voltages up to 200 V.
This diode is packaged in a surface mount SMC package, enabling efficient and compact PCB mounting for modern electronic designs. The maximum forward voltage drop of 900 mV ensures reduced power losses during operation, while the fast peak reverse recovery time of 25 ns improves switching efficiency, making it ideal for high-speed switching circuits.
With an operating temperature range from -55°C to 150°C, this diode maintains stability and performance under harsh and varying temperature conditions. Its peak non-repetitive forward surge current rating of 100 A allows it to endure momentary overloads common in power electronics and switching power supplies.
The compact physical dimensions of 7.11 mm length, 6.22 mm width, and 2.3 mm height make it suitable for dense electronics assemblies. The device contains 2 pins designed for surface mount technology (SMT), enabling automated assembly processes.
These technical features make the DiodesZetex ES3D-13-F diode an excellent choice for applications in power conversion, industrial electronics, and embedded systems requiring robust and efficient switching components.
Surface mount SMC package with 2 pins for PCB integration. Maximum forward current: 3 A for moderate power loads. Maximum peak repetitive voltage: 200 V withstand capability. Minimal forward voltage drop at 900 mV enhances efficiency.
Fast reverse recovery time improves switching speed. Wide temperature operation from -55°C up to 150°C. Peak surge current tolerance of 100 A for transient conditions. Compact dimensions ideal for electronic component assemblies.
Country of origin: China.
Explore EnvMart for a wide range of discrete semiconductors and Switching Diodes by leading brands including DiodesZetex. Enhance your electronic designs with certified, quality switching components from EnvMart's comprehensive industrial catalog.
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Frequently Asked Questions
The maximum forward current of this model is 3 A.
It has a fast peak reverse recovery time of 25 ns, which helps reduce switching losses.
The diode can withstand a maximum peak reverse repetitive voltage of 200 V.
The maximum forward voltage drop is 900 mV, ensuring efficient switching performance.
The dimensions are 7.11 mm in length, 6.22 mm in width, and 2.3 mm in height.
It operates within a wide temperature range from -55°C to 150°C.
This model is packaged in a surface mount SMC package.
It has a pin count of 2, designed for compact circuit integration.
The peak non-repetitive forward surge current rating is 100 A, allowing it to handle transient overloads.
It features a single diode configuration.
This diode is suitable for applications in power conversion, industrial electronics, and embedded systems.
The country of origin for this diode is China.
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