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DiodesZetex Silicon Junction Switching Diode, Isolated 300 mA, 75 V, 6-Pin SC-88 BAS16TW-7-F

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DiodesZetex Silicon Junction Switching Diode, Isolated 300 mA, 75 V, 6-Pin SC-88 BAS16TW-7-F

Name: DiodesZetex Silicon Junction Switching Diode, Isolated 300 mA, 75 V, 6-Pin SC-88 BAS16TW-7-F
Brand: DiodesZetex
SKU: 287007
Price: 0.15 USD
Availability: InStock

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Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1mm
Length	2.2mm
Model	BAS16TW-7-F
Width	1.35mm
Mount Type	Surface
Series	MMBD4148TW/BAS16TW
Maximum Operating Temperature	150°C
Package Type	SC-88
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	6
Maximum Power Dissipation Pd	200mW
Diode Configuration	Isolated
Peak Non-Repetitive Forward Surge Current Ifsm	2A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	300mA
Maximum Peak Reverse Repetitive Voltage Vrrm	75V

Key Features

Isolated silicon junction diode designed for switching applications.
Maximum forward current is rated at 300 mA for efficient current conduction.
Maximum peak reverse repetitive voltage is 75 V, ensuring reliability in reverse voltage conditions.
Compact surface-mount SC-88 package with a 6-pin configuration.
Peak reverse recovery time of 4 ns supports fast switching speeds.
Operates in a temperature range from -65°C to 150°C for versatile usage environments.
Maximum forward voltage is 1.25 V to minimize power loss.
Maximum power dissipation up to 200 mW to handle operational thermal loads.

Product Description

DiodesZetex BAS16TW-7-F is a high-performance silicon junction switching diode designed with isolation properties and provided in a 6-pin SC-88 surface-mount package. It supports a maximum forward current of 300 mA and can withstand peak reverse repetitive voltage of 75 V, making it suitable for demanding electronic switching applications.

This diode features a fast peak reverse recovery time of 4 ns, enhancing circuit efficiency in high-speed switching environments. Its compact dimensions (2.2 mm length, 1.35 mm width, and 1 mm height) allow integration into space-sensitive electronic assemblies. With an operating temperature range from -65°C to 150°C, the diode is robust across various industrial and commercial temperature conditions.

The maximum forward voltage of 1.25 V and power dissipation rating of 200 mW make the BAS16TW-7-F a reliable choice in semiconductor discrete components for switching and signal processing circuits. This diode is manufactured in China and complies with industry standards for quality and performance, albeit with no specific automotive certification.

This product serves critical roles in industries like electronics manufacturing, telecommunications, and instrumentation requiring reliable semiconductor switching devices. Its surface mount design facilitates high-volume automatic assembly on printed circuit boards (PCBs).

Isolated silicon junction configuration ensures reliable switching performance. Surface mount SC-88 package with 6 pins for compact installation. Maximum forward current of 300 mA supports moderate power levels. Peak reverse recovery time of 4 ns optimizes switching speed.

Operating temperature range from -65°C to 150°C accommodates harsh environments. Voltage ratings ensure protection against typical circuit stress. Power dissipation rating enables stable operation under thermal loads. Dimensions adapted for modern PCB space constraints.

Manufactured in China with consistent quality control. Applications include electronic switching and signal processing in diverse industrial sectors. Explore our range of discrete semiconductor Switching Diodes and electronics components at EnvMart for industrial and commercial use.

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Frequently Asked Questions

The maximum forward current of this diode is rated at 300 mA, allowing for efficient current conduction in switching applications.

It can withstand a peak reverse repetitive voltage of 75 V, ensuring reliability in reverse voltage conditions.

This model comes in a compact SC-88 surface-mount package with a 6-pin configuration, suitable for space-sensitive applications.

The peak reverse recovery time is 4 ns, which supports fast switching speeds in electronic circuits.

It operates within a temperature range from -65°C to 150°C, making it suitable for various industrial environments.

The maximum power dissipation is rated at 200 mW, allowing it to handle operational thermal loads effectively.

The dimensions of this diode are 2.2 mm in length, 1.35 mm in width, and 1 mm in height, making it compact for PCB integration.

It features an isolated silicon junction configuration, ensuring reliable switching performance in various applications.

The maximum forward voltage is 1.25 V, which helps minimize power loss during operation.

The peak non-repetitive forward surge current is rated at 2 A, providing additional robustness during transient conditions.

This diode is suitable for applications in electronics manufacturing, telecommunications, and instrumentation, particularly for switching and signal processing.

It is manufactured in China, adhering to industry standards for quality and performance.