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Infineon HEXFET N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-263 Surface Mount IRL1404ZSTRLPBF

Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IRL1404ZSTRLPBF
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 200A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 5.9mΩ
Maximum Power Dissipation Pd 230W
Typical Gate Charge Qg @ Vgs 110nC
Maximum Gate Source Voltage Vgs 16V
Forward Voltage Vf 1.3V

Key Features

  • Features low on-resistance with 5.9 milliohm typical drain-source resistance.
  • Capable of maximum power dissipation of 230 W for high efficiency.
  • Supports fast switching speeds suitable for power electronics.
  • Operates reliably between -55°C to 175°C junction temperature.
  • Maximum gate-source voltage rating of 16 V enables robust control.
  • Typical gate charge is 110 nC at Vgs=10 V, optimizing switching losses.
  • Forward voltage drop is 1.3 V ensuring efficient conduction.
  • Designed without automotive standard certifications and approvals.

Product Description

Infineon IRL1404ZSTRLPBF HEXFET N-Channel MOSFET is a high-performance power transistor designed for surface-mount applications with a 3-pin TO-263 package. It supports a continuous drain current up to 200 A and a maximum drain-source voltage rating of 40 V, making it suitable for demanding power switching tasks.

This MOSFET incorporates advanced processing techniques to provide an exceptionally low on-resistance of 5.9 milliohms typical, which reduces conduction losses and improves energy efficiency in power circuits. The device is capable of dissipating up to 230 W, allowing robust operation in thermal environments.

With a junction temperature range from -55°C to 175°C, the IRL1404ZSTRLPBF MOSFET offers reliable performance in harsh operating conditions. Its gate-source voltage maximum of 16 V and typical gate charge of 110 nC at 10 V give designers precise and fast switching control, optimizing performance in power conversion devices.

The forward voltage drop of 1.3 V supports efficient current flow with minimal losses. Although not meeting specific automotive standards or approvals, it is highly suited for industrial, electronic component design, power supplies, and power management systems.

Features low on-resistance with 5.9 milliohm typical drain-source resistance. Capable of maximum power dissipation of 230 W for high efficiency. Supports fast switching speeds suitable for power electronics. Operates reliably between -55°C to 175°C junction temperature.

Maximum gate-source voltage rating of 16 V enables robust control. Typical gate charge is 110 nC at Vgs=10 V, optimizing switching losses. Forward voltage drop is 1.3 V ensuring efficient conduction. Designed without automotive standard certifications and approvals.

Ideal for industrial and power management applications in electronics and electricals.

This MOSFET is widely used in industrial and electronic applications requiring high current and low power losses such as switching power supplies, motor drives, and DC-DC converters. Its surface mount TO-263 package facilitates easy integration into compact circuit boards.

Discover more Infineon semiconductor products and power MOSFETs with EnvMart's extensive catalog for industrial and electronic component needs.

Infineon HEXFET N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-263 Surface Mount IRL1404ZSTRLPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 200 A.

This MOSFET has a maximum drain-source voltage rating of 40 V.

It features a typical on-resistance of 5.9 milliohms, which helps reduce conduction losses.

The maximum power dissipation capability of this model is 230 W.

It operates reliably between -55°C and 175°C junction temperature.

The maximum gate-source voltage rating for this unit is 16 V.

The typical gate charge at Vgs=10 V is 110 nC.

The forward voltage drop is 1.3 V, ensuring efficient conduction.

This model uses a TO-263 surface mount package.

The IRL1404ZSTRLPBF has a 3-pin configuration.

This MOSFET is designed without automotive standard certifications and approvals, making it unsuitable for automotive applications.

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