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| Country of Origin | India |
|---|---|
| Brand | Texas Instruments |
| Height | 200μm |
| Length | 1mm |
| Model | CSD17484F4 |
| Width | 600μm |
| Mount Type | Surface |
| Series | NexFET |
| Maximum Operating Temperature | 150°C |
| Package Type | VSONP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 128mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 1V |
Texas Instruments CSD17484F4 is a NexFET N-Channel MOSFET designed for efficient power semiconductor switching in industrial and electronic applications. It supports a maximum continuous drain current of 3 A and drain-source voltage rating of 30 V, operating in enhancement mode within a compact 8-pin VSONP surface mount package.
This MOSFET features a low maximum drain-source resistance of 128 mΩ and can dissipate up to 500 mW power, delivering high efficiency and reliability. The device withstands wide temperature extremes from -55°C to 150°C, making it suitable for demanding environments such as industrial controls, power management, and consumer electronics.
Its compact dimensions - 1 mm length, 600 μm width, and 200 μm height - facilitate space-saving designs. The 12 V maximum gate-source voltage allows for precise switching control. As a surface mount device, it integrates seamlessly onto PCBs for automated assembly.
Applications include power switching, motor controls, DC-to-DC converters, and general purpose amplification in laboratory and industrial settings. The NexFET technology ensures low on-resistance and fast switching performance, contributing to energy efficiency and thermal management.
The MOSFET features an enhancement mode with an 8-pin VSONP package. Maximum continuous drain current is rated at 3 amperes. The drain-source voltage maximum is 30 volts, suitable for varied electronic applications. Offers low resistance of 128 milliohms for efficient switching performance.
Maximum power dissipation is 500 milliwatts, enabling durable operation. Supports a wide operating temperature from -55°C to 150°C. Maximum gate-source voltage is 12 volts enhancing control flexibility. Compact package dimensions of 1 mm length, 600 μm width, and 200 μm height.
Surface mount type suitable for PCB integration and automated manufacturing. Explore the extensive range of high-quality MOSFETs and semiconductor devices available at EnvMart for your industrial, laboratory, and electronic manufacturing needs.
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