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onsemi SUPERFET III N-Channel MOSFET & Diode 24 A 650 V Enhancement 3-Pin TO-263 FCB125N65S3
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.6mm |
| Length | 14.6mm |
| Model | FCB125N65S3 |
| Width | 9.6mm |
| Mount Type | Surface |
| Series | SUPERFET III |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 181W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET deploys advanced Superfet III technology for superior switching performance.
- It features 125 mΩ maximum drain-source resistance to minimize conduction losses.
- Low typical gate charge of 46 nC enhances switching efficiency and reduces power consumption.
- Capable of 181 W maximum power dissipation with a junction temperature up to 150°C.
- Robust design includes avalanche testing and RoHS compliance for industrial use.
- Package dimensions 14.6 mm length, 9.6 mm width, and 4.6 mm height ensure compatibility with surface mounting.
- Operating temperature range from -55°C to 150°C suits demanding environments.
- Maximum gate-source voltage rating of 30 V for reliable gate control.
Product Description
onsemi FCB125N65S3 is a high voltage N-Channel enhancement mode MOSFET with integrated diode, designed for efficient power management and switching applications. Featuring the advanced SUPERFET III technology, this device provides low on-resistance and minimal gate charge, optimizing conduction and switching losses.
Its rated maximum continuous drain current of 24 A and a drain-source voltage of 650 V render it suitable for various industrial, automotive, and consumer power control systems. The compact TO-263 package supports surface mounting and reliable thermal management with a maximum power dissipation of 181 W.
The MOSFET is designed to operate within a temperature range of -55°C to 150°C, making it robust against harsh environments. The low typical gate charge of 46 nC ensures fast switching speed and improved efficiency in applications such as DC-DC converters, motor drives, and power supplies. The integrated diode aids in efficient switching, reducing energy loss.
This device complies with RoHS standards and undergoes 100% avalanche testing to ensure quality and reliability. Dimensions of 14.6 mm length, 9.6 mm width, and 4.6 mm height make it compatible with modern PCB layouts.
The MOSFET deploys advanced Superfet III technology for superior switching performance. It features 125 mΩ maximum drain-source resistance to minimize conduction losses. Low typical gate charge of 46 nC enhances switching efficiency and reduces power consumption.
Capable of 181 W maximum power dissipation with a junction temperature up to 150°C. Robust design includes avalanche testing and RoHS compliance for industrial use. Package dimensions 14.6 mm length, 9.6 mm width, and 4.6 mm height ensure compatibility with surface mounting.
Operating temperature range from -55°C to 150°C suits demanding environments. Maximum gate-source voltage rating of 30 V for reliable gate control. Integrated diode supports efficient operation in switched mode power supplies.
This onsemi SUPERFET III MOSFET & Diode device is ideal for use in industrial automation, power management, DC motor controllers, and HVAC systems. EnvMart offers this reliable discrete semiconductor device for professional engineering applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 24 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
It comes in a TO-263 package with dimensions of 14.6 mm length, 9.6 mm width, and 4.6 mm height.
The typical gate charge is 46 nC at Vgs.
The operating temperature range is from -55°C to 150°C.
It is capable of a maximum power dissipation of 181 W.
The maximum gate-source voltage rating is 30 V.
This model supports surface mounting.
The maximum drain-source resistance is 125 mΩ.
Yes, it complies with RoHS standards.
This MOSFET utilizes advanced SUPERFET III technology for superior switching performance.
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