$1.70
$1.65
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi N-Channel MOSFET 32 A 80 V Enhancement, 8-Pin PQFN NTMFS006N08MC
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Length | 6.1mm |
| Model | NTMFS006N08MC |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NTMFS006N08MC |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 32A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 78W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 32 amperes.
- Maximum drain-source voltage rated at 80 volts.
- Low on-resistance of 6 milliohms allowing efficient conduction.
- Enhancement mode channel for improved switching performance.
- Maximum power dissipation of 78 watts enabling high power handling.
- Operating temperature range from -55°C to 150°C for reliability in extreme conditions.
- Typical gate charge of 30 nano-Coulombs at Vgs ensuring fast switching.
- Forward voltage drop of 1.2 volts reducing conduction losses.
Product Description
onsemi NTMFS006N08MC is a high-performance N-Channel MOSFET designed for power applications requiring efficient switching and low conduction losses. This MOSFET operates at a maximum continuous drain current of 32 A and can tolerate a maximum drain-source voltage of 80 V. Its enhancement mode channel and shielded gate technology provide superior switching performance with minimal on-state resistance.
The device incorporates a robust 8-pin PQFN package, with compact dimensions of 6.1 mm length and 5.1 mm width, allowing for surface mounting in space-constrained applications. It features a maximum power dissipation of 78 W and an operating temperature range from -55°C to 150°C, making it suitable for demanding industrial, automation, and power management systems.
This MOSFET achieves a low maximum drain-source resistance (Rds) of 6 mΩ, which reduces conduction losses and enhances energy efficiency. The typical gate charge of 30 nC at gate-source voltage, combined with a forward voltage drop of 1.2 V, facilitates fast switching and low power dissipation. It also supports a maximum gate-source voltage of 20 V and is designed to lower switching noise and electromagnetic interference, ideal for sensitive equipment.
The NTMFS006N08MC is an excellent choice for industrial power control, laboratory equipment, power converters, and electronic switching circuits where reliable, high-performance MOSFETs are required. The device is 100% unit-level tested ensuring quality and reliability.
Maximum continuous drain current of 32 amperes. Maximum drain-source voltage of 80 volts. Low drain-source resistance of 6 milliohms for efficient conduction. Enhancement mode channel technology for optimized switching. Maximum power dissipation of 78 watts for high power applications.
Wide operating temperature range (-55°C to 150°C) for harsh environments. Typical gate charge of 30 nano-Coulombs enables fast switching. Forward voltage of 1.2 volts reduces power loss. Compact 8-Pin PQFN surface mount package.
Shielded gate technology minimizes switching noise and EMI. Explore complete onsemi MOSFET offerings and related power semiconductor components at EnvMart, your reliable source for industrial electronic components.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 32 amperes.
This MOSFET is rated for a maximum drain-source voltage of 80 volts.
It has a low drain-source resistance of 6 milliohms, allowing for efficient conduction.
The operating temperature range is from -55°C to 150°C, making it suitable for extreme conditions.
The typical gate charge is 30 nano-Coulombs at gate-source voltage.
The forward voltage drop is 1.2 volts, which helps reduce conduction losses.
It comes in an 8-pin PQFN package, suitable for surface mounting.
The maximum power dissipation is rated at 78 watts, enabling high power handling.
This model uses an enhancement mode channel, which improves switching performance.
The maximum gate-source voltage is 20 volts.
It is suitable for industrial power control, laboratory equipment, power converters, and electronic switching circuits.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$6.78
$6.57
-3%
New
$23.16
$20.22
-12.7%
Recently Viewed Products
$1.70
$1.65
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent