onsemi NTH Silicon Carbide N-Channel MOSFET, 17.3 A, 1.2 kV, Enhancement Mode, 4-Pin TO-247 Package NTH4L160N120SC1

onsemi NTH4L160N120SC1 is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for power electronic applications. Featuring a maximum continuous drain current of 17.3 A and a drain-source voltage rating of 1.2 kV, this device excels in efficient power switching with its enhancement mode channel. The MOSFET comes in a 4-pin TO-247 package incorporating through-hole mounting, making it suitable for both prototype and industrial PCB designs.

This advanced SiC MOSFET offers a low typical gate charge of 34 nC, minimizing switching losses and improving system efficiency in high-frequency circuits. Its maximum drain-source resistance of 224 milliohms further enhances performance by reducing conduction losses during operation.

With a high maximum power dissipation of 111 W and an operating temperature range of -55°C to 175°C, it is engineered for demanding environments. The device supports a maximum gate-source voltage of 25 V, providing robust gate driving characteristics, and has a forward voltage drop of 4 V optimized for high voltage applications.

Designed for applications like uninterruptible power supplies (UPS), DC/DC converters, and boost inverters, this MOSFET ensures high reliability and durability. It fully complies with RoHS directives, aligning with global environmental regulations.

Enhancement mode N-channel Silicon Carbide MOSFET. Continuous drain current of 17.3 A with 1.2 kV drain-source voltage rating. Low gate charge enables efficient high-speed switching. Compact 4-pin TO-247 through-hole package.

Wide operating temperature range suitable for harsh conditions. Compliant with RoHS and lead-free manufacturing standards. Explore the Electronics & Electricals category at EnvMart to find more high-quality semiconductor components from leading brands like onsemi.

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