onsemi NTH N-Channel MOSFET 29 A 1.2 kV Enhancement 3-Pin TO-247 NTHL160N120SC1

onsemi NTHL160N120SC1 is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for power electronics applications. It features a continuous drain current of 29 A and a maximum drain-source voltage of 1200 V, encapsulated in a TO-247 3-pin package suitable for through-hole mounting.

This device operates with an enhancement mode channel, offering low gate charge of 34 nC to enable efficient switching performance and reduced power loss. It has a typical drain-source on resistance of 110 milliohms, balancing conduction losses and thermal management effectively.

The maximum power dissipation rating of 119 W allows this MOSFET to handle significant power loads in demanding environments. The operating temperature range from -55°C to 175°C supports diverse industrial and commercial conditions.

Its package dimensions are compact with a height of 20.82 mm, length of 15.87 mm, and width of 4.82 mm. The device complies with RoHS standards ensuring it is free from hazardous substances, and it is lead-free.

This MOSFET is optimized for use in applications such as uninterruptible power supplies (UPS), DC/DC converters, boost inverters, and other power management circuits demanding high voltage and current capability with reliable switching.

Channels N-type enhancement mode for high efficiency. Supports a maximum continuous drain current of 29 amperes. Maximum drain-source voltage rated at 1200 volts. Low typical gate charge of 34 nC at Vgs. Maximum drain-source resistance of 110 milliohms.

Designed with a 3-pin TO-247 through-hole mount package. Capable of dissipating up to 119 watts of power. Operates within temperatures from -55°C up to 175°C. RoHS compliant and Pb-free for environmental safety. Ideal for power electronics applications requiring robust MOSFETs.

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