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onsemi NTH N-Channel Enhancement MOSFET, 29 A, 1.2 kV, 3-Pin TO-247 Package NTHL160N120SC1
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | NTHL160N120SC1 |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | NTH |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 119W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | 25V |
Key Features
- Supports maximum continuous drain current of 29 A for robust performance.
- Can withstand a maximum drain-source voltage of 1.2 kV for high voltage operations.
- Features a TO-247 3-pin package suitable for through-hole mounting.
- Has a low typical gate charge of 34 nC enabling efficient switching.
- Capable of dissipating power up to 119 W ensuring high endurance.
- Operates reliably within the temperature range of -55°C to 175°C.
- Channel resistance is low at 160 mΩ for efficient conduction.
- Meets RoHS compliance for environmental safety.
Product Description
onsemi NTHL160N120SC1 is an N-Channel Enhancement Silicon Carbide (SiC) MOSFET designed for industrial and power electronic applications requiring high current and voltage capability. Packaged in a durable TO-247 3-pin through-hole format, this MOSFET supports a continuous drain current of 29 Amperes and withstands drain-source voltages up to 1.2 kilovolts.
Boasting a low typical gate charge of 34 nC, it enables efficient switching performance with minimal drive requirements. The device features a drain-source resistance of approximately 160 milliohms, facilitating efficient conduction and reducing power loss in circuits. It has a power dissipation rating of 119 Watts, suitable for demanding power density environments.
Its temperature ratings allow reliable operation from -55°C up to a maximum of 175°C, ensuring suitability for harsh industrial and automotive conditions. The MOSFET complies with RoHS standards, offering environmentally friendly use.
Applications include uninterruptible power supplies (UPS), DC/DC converters, boost inverters, and other power management systems in industrial, automotive, and renewable energy sectors. The package and pin configuration provide straightforward mounting and replacement in through-hole PCB designs.
Maximum continuous drain current: 29 A. Maximum drain-source voltage: 1.2 kV. Typical gate charge: 34 nC. Power dissipation: 119 W. Gate-source voltage max: 25 V. Operating temperature range: -55°C to 175°C. Low drain-source resistance for efficiency.
RoHS compliant and Pb free.
This MOSFET is a reliable choice for enhancing efficiency and robustness in power electronics circuits widely used across industrial, laboratory, HVAC, and automotive applications. Discover more advanced semiconductor devices and power management solutions in the discrete semiconductors category.
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Frequently Asked Questions
The maximum continuous drain current of this model is 29 A.
It can withstand a maximum drain-source voltage of 1.2 kV.
The typical gate charge is 34 nC, enabling efficient switching performance.
This MOSFET has a power dissipation rating of 119 W.
It operates reliably within the temperature range of -55°C to 175°C.
The TO-247 package features a 3-pin configuration suitable for through-hole mounting.
The channel resistance is low at approximately 160 mΩ, facilitating efficient conduction.
Yes, this model complies with RoHS standards for environmental safety.
The dimensions are 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width.
It is suitable for applications such as uninterruptible power supplies (UPS), DC/DC converters, and boost inverters.
The maximum gate-source voltage is 25 V.
This model features an N-channel enhancement mode.
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