onsemi N-Channel Power MOSFET 60 V, 50 A, 5-Pin DFN Surface Mount Enhancement Mode NTMFS5C673NLT1G

onsemi NTMFS5C673NLT1G is a N-Channel Power MOSFET engineered for high-efficiency electronic applications requiring compact surface-mounted devices. Its 5-Pin DFN package facilitates integration into modern PCB designs where space and performance are critical. With a maximum continuous drain current of 50 A and a drain-source voltage rating of 60 V, this MOSFET is suitable for power management, switching, and amplification tasks in industrial and consumer electronics.

The device operates in enhancement mode, providing reliable performance through a low maximum drain-source resistance of 13 milliohms, reducing conduction losses and improving thermal behavior. The gate charge of 9.5 nC ensures rapid switching, beneficial in high-frequency circuits.

Its thermal limits allow operation between -55°C and 175°C, enabling use in harsh environments including industrial automation, power supplies, and automotive electronics, although it is not certified for automotive standard compliance. The maximum power dissipation of 46 W supports applications requiring significant power load handling.

Physically, the component measures 6.1 mm by 5.1 mm with a height of 1.05 mm, making it ideal for compact assemblies. The package type DFN combined with surface mount technology ensures efficient heat dissipation and reliable mounting.

While this chipset does not carry specific standards or approvals, its robust design makes it a versatile choice for circuit designers focusing on size, efficiency, and performance in electronic components.

This MOSFET operates with an enhancement mode channel for efficient switching performance. It features a 5-Pin DFN package optimized for surface mounting in compact electronic assemblies. The device supports a maximum continuous drain current of 50 A and a maximum drain-source voltage of 60 V.

It offers a low maximum drain-source resistance (Rds) of 13 milliohms to minimize power losses. The MOSFET has a typical forward voltage of 1.2 V and a maximum power dissipation of 46 W for high-load capacity. Designed for operation over a wide temperature range from -55°C to 175°C, ensuring robustness in diverse environments.

Its typical gate charge of 9.5 nC provides fast switching suitable for high-frequency applications. The device’s compact physical dimensions are 6.1 mm width, 5.1 mm length, and 1.05 mm height, supporting dense PCB designs.

This MOSFET does not have automotive standard certification and carries no specific approvals. Explore the extensive range of power MOSFETs and semiconductor components at EnvMart to fulfill all your electronic design requirements.