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Infineon HEXFET N-Channel MOSFET, 18 A Continuous Drain Current, 200 V Maximum Drain Source Voltage, 150 W Power IRF640NPBF

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Infineon HEXFET N-Channel MOSFET, 18 A Continuous Drain Current, 200 V Maximum Drain Source Voltage, 150 W Power IRF640NPBF

Name: Infineon HEXFET N-Channel MOSFET, 18 A Continuous Drain Current, 200 V Maximum Drain Source Voltage, 150 W Power IRF640NPBF
Brand: Infineon
SKU: 275404
Price: 0.61 USD
Availability: InStock

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Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin	Mexico
Brand	Infineon
Height	8.77mm
Length	10.67mm
Model	IRF640NPBF
Width	4.69mm
Mount Type	Through Hole
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	18A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	150mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150W
Typical Gate Charge Qg @ Vgs	67nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V
IRF640NPBF N-Channel MOSFET, 18 A, 200 V HEXFET, 3-Pin TO-220AB InfineonBrand	Infineon

Key Features

Supports high efficiency switching applications with low on-resistance.
Maximum continuous drain current of 18 amperes for robust power handling.
Operates at voltages up to 200 volts for versatile industrial applications.
Rated for maximum power dissipation of 150 watts for reliable thermal management.
Enhancement mode channel type with 3-pin through-hole TO-220 package design.
Wide operating temperature range from -55°C to 175°C for demanding thermal environments.
Fully avalanche rated to handle voltage spikes safely during switching.
Typical gate charge of 67 nC enabling simplified drive requirements.

Product Description

Infineon IRF640NPBF HEXFET N-Channel MOSFET is engineered for high-efficiency switching solutions requiring robust power handling and high reliability. Featuring an 18 amp maximum continuous drain current and a maximum drain-source voltage of 200 volts, this device supports a wide range of industrial, commercial, and automotive applications.

Its TO-220 through-hole package facilitates excellent heat dissipation, making it suitable for power management circuits where thermal performance is critical. The device operates over an extended temperature range from -55°C to 175°C, ensuring stable function in various thermal conditions without compromise.

This enhancement-mode MOSFET exhibits low on-resistance, which minimizes power loss and enhances overall energy efficiency. Being fully avalanche rated, it safely withstands transient voltage spikes common in demanding switching environments. The typical gate charge of 67 nC also allows for reduced switching losses and easier integration with gate drivers.

Continuous drain current up to 18 amps for robust power management. Maximum drain-source voltage rating of 200 volts. Power dissipation capacity of 150 watts ensuring thermal reliability. Three-pin TO-220 package optimized for effective heat transfer with through-hole mounting.

Wide operational temperature range from -55°C to 175°C. Fully avalanche rated for improved surge tolerance and reliability. Low on-resistance and typical gate charge of 67 nC for efficient switching. Channel type: N-channel, enhancement mode for reliable power switching.

Applications include industrial automation power supplies, motor controllers, renewable energy inverters, and amplification circuits.

This MOSFET is a dependable choice in semiconductor discrete components for industrial electronics requiring efficient power conversion and robust electrical performance. Browse more Infineon semiconductor products and MOSFET devices on EnvMart for diverse industrial and commercial applications.

Explore more products in our Discrete Semiconductor category.

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Frequently Asked Questions

The maximum continuous drain current for this model is 18 amperes, allowing for robust power handling in various applications.

This MOSFET has a maximum drain-source voltage rating of 200 volts, making it suitable for versatile industrial applications.

It is rated for a maximum power dissipation of 150 watts, ensuring reliable thermal management during operation.

The device comes in a TO-220 package type, which is designed for effective heat dissipation and through-hole mounting.

The typical gate charge is 67 nC, which simplifies drive requirements and reduces switching losses.

It operates over a wide temperature range from -55°C to 175°C, suitable for demanding thermal environments.

This model features an N-channel enhancement mode, which is ideal for reliable power switching applications.

This MOSFET has a pin count of 3, which is typical for its TO-220 package design.

The maximum gate-source voltage for this device is -20 to +20 volts, allowing for flexible circuit design.

It is suitable for applications including industrial automation power supplies, motor controllers, renewable energy inverters, and amplification circuits.

The maximum drain-source resistance is 150 mΩ, which contributes to its low on-resistance and efficient performance.

The country of origin for this MOSFET is Mexico, reflecting its manufacturing location.