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Infineon HEXFET N-Channel MOSFET 30 A 200 V Enhancement Mode 3-Pin TO-247 IRFP250NPBF
Specifications
| Country of Origin | Mexico |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP250NPBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 214W |
| Typical Gate Charge Qg @ Vgs | 123nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250NPBFBrand | Infineon |
Key Features
- Supports a maximum continuous drain current of 30A for robust power handling.
- Features a maximum drain-source voltage of 200V ensuring reliable operation.
- Low on-state resistance Rds(on) of 75mΩ reduces energy loss and improves efficiency.
- Maximum power dissipation rating of 214W for heavy-duty usage.
- Enables efficient control with an enhancement mode channel configuration.
- Operates within a wide temperature range from -55°C to 175°C.
- Typical gate charge of 123nC allows for fast switching performance.
- Compatible with through-hole mounting and TO-247AC package type.
Product Description
The Infineon IRFP250NPBF HEXFET N-Channel MOSFET is engineered for high performance in demanding electronic environments, offering a continuous drain current of 30A and a maximum drain-source voltage of 200V. Its enhancement mode channel provides efficient current control, while a low Rds(on) value of 75mΩ minimizes conduction losses, improving overall system efficiency.
Housed in a TO-247 package with a robust 3-pin configuration, this MOSFET supports heavy-duty applications with a maximum power dissipation of 214W and an operating temperature range from -55°C to +175°C, ensuring reliable operation in harsh industrial conditions.
The device features a typical gate charge of 123nC for fast switching and a maximum gate-source voltage range of -20V to +20V, offering flexibility for various gate drive designs. Forward voltage is rated at 1.3V, and the component is designed for through-hole mounting for ease of integration.
This MOSFET is ideal for use in power supplies, motor control systems, inverters, and renewable energy converters, delivering efficient switching and robust current capabilities. Its single pulse avalanche energy rating supports protection against brief energy surges, enhancing device durability and reliability.
Supports 30A continuous drain current suitable for high current loads. Maximum drain-source voltage rating of 200V ensures device reliability. Low Rds(on) of 75mΩ reduces power dissipation during conduction. Enhancement mode operation for precise control in circuits.
High power dissipation rating of 214W for demanding applications. Wide temperature operating range from -55°C to 175°C for harsh environments. TO-247 package designed for through-hole mounting. Maximum gate-source voltage of -20V to +20V offering design flexibility.
Typical gate charge of 123nC enabling fast switching speeds. Manufactured in Mexico ensuring quality and reliability.
This product is suitable for use in industrial automation, power conversion, motor drives, and renewable energy system applications where efficient power handling and robust switching are fundamental. Discover more industrial MOSFETs and electronic components by browsing our extensive EnvMart catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30A, suitable for high current loads.
It has a maximum drain-source voltage rating of 200V, ensuring reliable operation in various applications.
The low on-state resistance Rds(on) is 75mΩ, which helps reduce energy loss and improve efficiency.
This model has a maximum power dissipation rating of 214W, making it suitable for heavy-duty usage.
It operates within a wide temperature range from -55°C to 175°C, allowing for use in harsh environments.
The IRFP250NPBF is designed for through-hole mounting, facilitating easy integration into circuits.
The typical gate charge is 123nC, enabling fast switching performance in applications.
It supports a maximum gate-source voltage range of -20V to +20V, providing flexibility for various gate drive designs.
The dimensions are 20.3mm in height, 15.9mm in length, and 5.3mm in width.
This model is suitable for applications in power supplies, motor control systems, inverters, and renewable energy converters.
The forward voltage is rated at 1.3V, relevant for circuit design considerations.
This product is manufactured in Mexico, ensuring quality and reliability in its performance.
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