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Infineon HEXFET N-Channel MOSFET 42 A 100 V Enhancement Mode 3-Pin TO-247 IRFP150NPBF
Specifications
| Country of Origin | Mexico |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP150NPBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 36mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 42 amperes ensures high power handling.
- Drain-source voltage rating of 100 volts provides robust voltage tolerance.
- Low on-resistance Rds(on) of 36 milliohms enhances efficiency and minimizes losses.
- Maximum power dissipation rating of 160 watts supports demanding applications.
- Enhancement mode operation improves switching performance.
- Through-hole TO-247AC package facilitates easy mounting on printed circuit boards.
- Wide operating temperature range from -55°C to 175°C for industrial environments.
- Typical gate charge of 110 nC at Vgs enhances switching speed.
Product Description
Infineon IRFP150NPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor designed for power management and switching applications. It features a continuous drain current capacity of 42 A and can withstand a drain-source voltage of up to 100 V. Packaged in a sturdy TO-247AC through-hole format, it is ideal for mounting on printed circuit boards in industrial systems.
This enhancement-mode MOSFET demonstrates low on-resistance (36mΩ), resulting in reduced power losses and improved thermal efficiency during operation. It supports a maximum power dissipation of 160 W, allowing it to handle substantial power loads in circuits.
The device operates reliably over a broad temperature range from -55°C to +175°C, making it suitable for demanding industrial, power supply, motor control, and renewable energy conversion applications. Its gate-source voltage rating of -20 V to +20 V provides versatility for various circuit designs.
Maximum continuous drain current of 42 A. Drain-source voltage rating of 100 V. Low Rds(on) value of 36 mΩ for enhanced efficiency. Power dissipation capability of 160 W. Enhancement mode transistor operation. Through-hole TO-247AC package for ease of mounting.
Wide operating temperature range: -55°C to +175°C. Typical gate charge of 110 nC at gate-source voltage. Maximum gate-source voltage rating of -20 V to +20 V. Compact package dimensions ensure practical installation.
Commonly used in industrial automation power supplies, motor drive circuits, telecommunications switching devices, and renewable energy systems, the Infineon IRFP150NPBF offers reliable performance under challenging operating conditions. Ensure adequate cooling for optimal operation and longevity.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon IRFP150NPBF is 42 A.
This model has a drain-source voltage rating of 100 V.
The low on-resistance (Rds(on)) of this MOSFET is 36 milliohms, which enhances efficiency and minimizes losses.
The maximum power dissipation rating is 160 W, allowing it to handle substantial power loads in circuits.
It operates reliably over a wide temperature range from -55°C to +175°C.
This model is packaged in a TO-247AC through-hole format, facilitating easy mounting on printed circuit boards.
The typical gate charge is 110 nC at a gate-source voltage (Vgs).
The maximum gate-source voltage rating for this model is -20 V to +20 V.
The IRFP150NPBF has a pin count of 3.
The forward voltage (Vf) of this MOSFET is 1.3 V.
This model features an N-channel type, which is suitable for enhancement mode operation.
It is commonly used in industrial automation power supplies, motor drive circuits, telecommunications switching devices, and renewable energy systems.
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