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onsemi Isolated PowerTrench 2 N-Channel MOSFET 3.5 A 60 V Enhancement Mode 8-Pin SOIC FDS9945
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS9945 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET operates in enhancement mode with isolated transistor configuration.
- Maximum drain-source resistance is 100 milliohms, ensuring efficient switching.
- It supports a maximum power dissipation of 2 watts for reliable operation.
- Operates within a wide temperature range from -55°C minimum to 175°C maximum.
- Typical gate charge is 8 nC at the specified gate-source voltage.
- The package dimensions are compact, measuring 5 mm length, 4 mm width, and 1.5 mm height.
- Designed for surface mount applications with an 8-pin SOIC package type.
- Channel type is N with a maximum gate-source voltage rating of -20 to +20 volts.
Product Description
onsemi model FDS9945 is an Isolated PowerTrench 2 N-Channel MOSFET designed for high-efficiency power management in electronic circuits. The device supports a maximum continuous drain current of 3.5 A and can withstand a maximum drain-source voltage of 60 V. Packaged in a compact 8-pin SOIC surface mount format, it is optimized for space-constrained applications.
This enhancement mode transistor features a low maximum drain-source resistance of 100 milliohms, which ensures minimal conduction losses and improved thermal performance. It offers reliable operation across a broad temperature range from -55°C to 175°C, suitable for industrial and commercial electronics.
The typical gate charge of 8 nC at rated gate voltage allows fast switching speeds making it ideal for switching power supplies, DC-DC converters, and load switching circuits. The transistor configuration is electrically isolated, providing improved system reliability.
Physical dimensions of the package include a length of 5 mm, width of 4 mm, and height of 1.5 mm, making it suitable for compact PCB layouts. The device does not carry automotive standards approval but meets general semiconductor requirements for discrete components.
This MOSFET is designed for industrial, commercial, and laboratory applications requiring efficient power control. Ideal for use in power management, driver circuits, and general switching in electronic equipment. Surface mount package supports automated manufacturing and assembly.
Stable electrical characteristics ensure performance consistency under temperature stress. Compact form factor makes it suitable for modern miniaturized electronics. Reliable isolated transistor design enhances device safety and integration.
For additional parts and related components, users can explore the discrete semiconductors category on EnvMart, ensuring compatibility and quality from trusted brands such as onsemi.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.5 A.
This MOSFET can withstand a maximum drain-source voltage of 60 V.
It supports a maximum power dissipation of 2 watts.
The package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The typical gate charge is 8 nC at the rated gate-source voltage.
It operates within a wide temperature range from -55°C to 175°C.
This MOSFET is designed for surface mount applications.
The maximum gate-source voltage rating is -20 to +20 volts.
The maximum drain-source resistance is 100 milliohms.
It is suitable for power management, driver circuits, and general switching in electronic equipment.
The channel type is N, and it operates in enhancement mode.
The country of origin for this model is India.
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