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onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 6A 30V Enhancement 8-Pin SOIC FDS6975
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS6975 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 32mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 14.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.73V |
| Transistor Configuration | Isolated |
Key Features
- Maximum continuous drain current of 6 amperes ensures reliable performance.
- Drain-source voltage rating of 30 volts for moderate voltage applications.
- Equipped with 8-pin SOIC package suited for surface mount technology.
- Powered by enhancement mode operation channel for controlled switching.
- Low gate charge of 14.5 nanocoulombs ensures fast switching capability.
- Maximum power dissipation of 2 watts supports thermal efficiency.
- Wide operating temperature range from -55°C to 150°C for varied environments.
- Forward voltage of -0.73 volts contributes to minimized conduction losses.
Product Description
onsemi FDS6975 Isolated PowerTrench 2 Type P-Channel MOSFET is engineered for high efficiency power switching in electronic circuits. With a drain current rating of 6 amperes and a drain-source voltage of 30 volts, this enhancement mode MOSFET is built to perform under a wide range of loads. Encapsulated in an 8-pin SOIC surface mount package, it features a shielded gate structure optimizing charge balance for superior switching performance.
The FDS6975 offers low gate charge (14.5nC) and soft reverse recovery body diode, which reduces switching losses and enhances system efficiency, making it suitable for synchronous rectification in power supplies. Its thermal handling capabilities allow operation from -55°C to 150°C, making it reliable for industrial and commercial electronics use.
This MOSFET has a maximum power dissipation of 2 watts and a drain-source resistance of 32 milliohms, allowing efficient power management. The isolated transistor configuration supports integration in complex circuit designs. The compact packaging dimensions (5mm length, 4mm width, and 1.5mm height) facilitate installation in dense PCB layouts.
Maximum continuous drain current of 6A ensures robust power handling. Drain-source voltage rating of 30V supports low to medium voltage applications. Utilizes enhancement channel mode for effective switching control. Low typical gate charge of 14.5nC enables fast switching speeds.
Forward voltage of -0.73V reduces conduction losses in circuits. Wide operating temperature range from -55°C to 150°C extends usability. Surface mount SOIC package with 8 pins supports automated PCB assembly. PowerTrench® series design improves system power density and efficiency.
Isolated transistor configuration for diverse electronic component integration. Compact form factor: 5mm × 4mm × 1.5mm to save PCB space.
This component is ideal for industrial, laboratory, automotive, and commercial electronic applications requiring efficient power management and switching performance. The onsemi FDS6975 MOSFET enhances system reliability in power supply circuits, motor drivers, and DC-DC converters. Explore the wide range of MOSFETs and power management solutions at EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 amperes.
The drain-source voltage rating is 30 volts, suitable for moderate voltage applications.
This model is encapsulated in an 8-pin SOIC package, which is designed for surface mount technology.
The typical gate charge is 14.5 nanocoulombs, which facilitates fast switching capability.
The maximum power dissipation is 2 watts, supporting thermal efficiency in applications.
This model operates within a temperature range of -55°C to 150°C, making it suitable for various environments.
The forward voltage is -0.73 volts, which helps to minimize conduction losses.
The dimensions of this model are 5mm in length, 4mm in width, and 1.5mm in height.
This model utilizes enhancement channel mode for effective switching control.
The FDS6975 has a total of 8 pins.
The maximum drain-source resistance is 32 milliohms, allowing efficient power management.
This MOSFET is suitable for applications in industrial, laboratory, automotive, and commercial electronics that require efficient power management and switching performance.
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