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Infineon OptiMOS 3 N-Channel MOSFET, 100 A, 80 V Enhancement, 3-Pin TO-220 IPP037N08N3GXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP037N08N3GXKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 6.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 214W |
| Typical Gate Charge Qg @ Vgs | 88nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Manufactured in a TO-220 package for through-hole mounting.
- Part of the OptiMOS 3 series optimized for energy efficiency and power density.
- Features a low maximum drain source resistance of 6.3 mΩ.
- Capable of dissipating up to 214 W of power.
- Operates reliably in temperatures from -55°C up to 175°C.
- Has a typical gate charge of 88 nC at Vgs.
- Designed for fast switching in SMPS and DC/DC converters.
- Three-pin configuration ensuring easy integration in electronic assemblies.
Product Description
Infineon IPP037N08N3GXKSA1 is a high-quality OptiMOS 3 N-Channel MOSFET designed for industrial and commercial applications requiring efficient power management. This device supports a maximum continuous drain current of 100 A and can withstand voltages up to 80 V, making it suited for use in power supplies, motor drives, and switching regulators.
The transistor is housed in a durable TO-220 package that facilitates through-hole mounting, ensuring reliability and ease of installation in dense electronic assemblies. Its low drain source resistance of 6.3 mΩ ensures minimal conduction losses, contributing to improved energy efficiency.
Operating temperature ranges from -55°C to 175°C allow this MOSFET to function in harsh conditions, while the typical gate charge of 88 nC provides excellent switching performance for high-speed applications.
This device is engineered to meet next-generation voltage regulation standards in numerous fields such as industrial electronics, computing hardware, telecommunications, and automotive electronics (non-AEC-Q101 certified).
Manufactured with lead-free plating and complies with environmental standards. Optimized for use in switched-mode power supplies and DC/DC converters. Offers fast switching speeds and low gate charge. High power dissipation capacity of 214 W enables handling of significant thermal loads.
Robust operating voltage and current ratings ensure durability in demanding applications. Three-pin TO-220 package enables convenient mounting and cooling options. Ideal for power density-focused designs requiring high efficiency.
Infineon's comprehensive MOSFET portfolio includes this high-performance unit suitable for custom electronic solutions. Explore more power management solutions and electronic components at EnvMart for your industrial and laboratory needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It can withstand a maximum drain source voltage of 80 V.
This MOSFET has a maximum power dissipation capacity of 214 W.
The typical gate charge at Vgs is 88 nC.
It is housed in a TO-220 package and is designed for through-hole mounting.
The operating temperature range is from -55°C to 175°C.
The dimensions are 15.95 mm in height, 10.36 mm in length, and 4.57 mm in width.
The maximum drain source resistance is 6.3 mΩ.
This unit has an N-channel type.
It is optimized for use in switched-mode power supplies and DC/DC converters.
The maximum gate source voltage is -20 V to +20 V.
Yes, it is manufactured with lead-free plating and complies with environmental standards.
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