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| Country of Origin | Mexico |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP2907PBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 209A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 470W |
| Typical Gate Charge Qg @ Vgs | 410nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Infineon IRFP2907PBF HEXFET N-Channel MOSFET is a high-performance power transistor designed for applications requiring efficient switching and high current capability. This 3-pin TO-247 package device provides a maximum continuous drain current of 209 amperes and a maximum drain-source voltage of 75 volts, ideal for power electronics and industrial use.
This enhancement-mode N-channel MOSFET operates with a very low on-resistance of 5 milliohms, minimizing conduction losses and improving overall system efficiency. The gate charge is optimized to 410 nanocoulombs, facilitating swift switching transitions.
The device supports operation within a wide temperature range of -55°C to 175°C and can dissipate power up to 470 watts, making it suitable for demanding thermal environments such as industrial power supplies, inverters, and motor controls.
The TO-247 package facilitates through-hole mounting on printed circuit boards, offering a robust form factor with length 15.9 mm, width 5.3 mm, and height 20.3 mm. The device's pin count is 3, providing straightforward integration into existing circuits.
Manufactured in Mexico, this MOSFET is ideal for electronic designers seeking high power, high current N-channel MOSFETs for a variety of industrial, commercial, and automotive electronics applications that do not require automotive certification.
This N-Channel MOSFET features an enhancement mode channel operating at 75 volts. It has a low maximum drain source resistance of 5 milli-ohms to ensure efficient conduction. The device can dissipate power up to 470 watts with operation temperatures ranging from -55°C to 175°C.
Its typical gate charge is 410 nanocoulombs at Vgs, with a maximum gate-source voltage of -20 to +20 volts. Designed for through-hole mounting, this MOSFET package dimensions are 15.9 mm length, 5.3 mm width, and 20.3 mm height.
Manufactured in Mexico, the transistor does not have automotive qualification but offers robust performance for high-current applications. Explore the extensive Infineon MOSFET portfolio on EnvMart to find suitable components for your high-efficiency power electronic projects.
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