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Infineon HEXFET N-Channel MOSFET 209 A 75 V Enhancement Mode 3-Pin TO-247 IRFP2907PBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin Mexico
Brand Infineon
Height 20.3mm
Length 15.9mm
Model IRFP2907PBF
Width 5.3mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 209A
Maximum Drain Source Voltage Vds 75V
Maximum Drain Source Resistance Rds 5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 470W
Typical Gate Charge Qg @ Vgs 410nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • This N-Channel MOSFET features an enhancement mode channel operating at 75 volts.
  • It has a low maximum drain source resistance of 5 milli-ohms to ensure efficient conduction.
  • The device can dissipate power up to 470 watts with operation temperatures ranging from -55°C to 175°C.
  • Its typical gate charge is 410 nanocoulombs at Vgs, with a maximum gate-source voltage of -20 to +20 volts.
  • Designed for through-hole mounting, this MOSFET package dimension measures 15.9 mm length, 5.3 mm width, and 20.3 mm height.
  • Manufactured in Mexico, the transistor does not have automotive qualification but offers robust performance for high-current applications.

Product Description

Infineon IRFP2907PBF HEXFET N-Channel MOSFET is a high-performance power transistor designed for applications requiring efficient switching and high current capability. This 3-pin TO-247 package device provides a maximum continuous drain current of 209 amperes and a maximum drain-source voltage of 75 volts, ideal for power electronics and industrial use.

This enhancement-mode N-channel MOSFET operates with a very low on-resistance of 5 milliohms, minimizing conduction losses and improving overall system efficiency. The gate charge is optimized to 410 nanocoulombs, facilitating swift switching transitions.

The device supports operation within a wide temperature range of -55°C to 175°C and can dissipate power up to 470 watts, making it suitable for demanding thermal environments such as industrial power supplies, inverters, and motor controls.

The TO-247 package facilitates through-hole mounting on printed circuit boards, offering a robust form factor with length 15.9 mm, width 5.3 mm, and height 20.3 mm. The device's pin count is 3, providing straightforward integration into existing circuits.

Manufactured in Mexico, this MOSFET is ideal for electronic designers seeking high power, high current N-channel MOSFETs for a variety of industrial, commercial, and automotive electronics applications that do not require automotive certification.

This N-Channel MOSFET features an enhancement mode channel operating at 75 volts. It has a low maximum drain source resistance of 5 milli-ohms to ensure efficient conduction. The device can dissipate power up to 470 watts with operation temperatures ranging from -55°C to 175°C.

Its typical gate charge is 410 nanocoulombs at Vgs, with a maximum gate-source voltage of -20 to +20 volts. Designed for through-hole mounting, this MOSFET package dimensions are 15.9 mm length, 5.3 mm width, and 20.3 mm height.

Manufactured in Mexico, the transistor does not have automotive qualification but offers robust performance for high-current applications. Explore the extensive Infineon MOSFET portfolio on EnvMart to find suitable components for your high-efficiency power electronic projects.

Infineon HEXFET N-Channel MOSFET 209 A 75 V Enhancement Mode 3-Pin TO-247 IRFP2907PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 209 amperes.

This N-Channel MOSFET can handle a maximum drain-source voltage of 75 volts.

It can dissipate power up to 470 watts, making it suitable for demanding applications.

The typical gate charge at Vgs is 410 nanocoulombs.

The package dimensions are 15.9 mm in length, 5.3 mm in width, and 20.3 mm in height.

The maximum gate-source voltage is -20 to +20 volts.

It operates within a temperature range of -55°C to 175°C.

This MOSFET is designed for through-hole mounting.

The maximum drain-source resistance is 5 milliohms.

This model has a pin count of 3.

The device is manufactured in Mexico.

It is suitable for high-current applications, including industrial power supplies and motor controls.

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