Infineon HEXFET N-Channel Power MOSFET 33 A 100 V Enhancement Mode 3-Pin TO-262 IRF540NLPBF

Infineon IRF540NLPBF HEXFET N-Channel Power MOSFET features a 33 A maximum continuous drain current and a 100 V maximum drain-source voltage. It utilizes an enhancement mode channel in a 3-pin TO-262 through-hole package designed for reliable power switching in electronic components and power management circuits.

This MOSFET exhibits a low maximum drain-source resistance of 44 mΩ that reduces conduction losses, delivering improved system efficiency in industrial, manufacturing, and electronic design applications. The device offers a maximum power dissipation of 130 W, enabling operation in demanding high-power environments.

Designed for use in diverse environments, it supports a minimum operating temperature of -55°C and a maximum operating temperature of 175°C, making it suitable for automotive, industrial power supplies, and HVAC controls.

The device’s typical gate charge of 71 nC ensures swift switching, optimizing performance in switching power stages and motor control applications. Its 3-pin TO-262 form factor facilitates straightforward mounting and dissipation.

Maximum continuous drain current of 33 A. Maximum drain-source voltage of 100 V. Enhancement mode N-channel configuration. Package type: TO-262, through-hole mount. Low Rds(on) of 44 milliohms. Power dissipation of 130 watts.

Wide operating temperature range from -55°C to 175°C. Typical gate charge is 71 nC for high-speed switching.

This Infineon Power MOSFET is ideal for applications in industrial power electronics, motor drivers, automotive electronic systems, and general-purpose power switching and amplification. Its design emphasizes efficiency, reliability, and thermal performance, providing a robust solution for demanding electronic circuit designs.

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