Infineon CoolMOS C3 N-Channel MOSFET 2 A 800 V Enhancement 3-Pin TO-220 SPA02N80C3XKSA1

Infineon SPA02N80C3XKSA1 CoolMOS C3 N-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient power management in industrial, consumer electronics, and power supply applications. It supports a maximum continuous drain current of 2 A and withstands a drain-source voltage of up to 800 V. The device comes in a standard 3-pin TO-220 package suitable for through-hole mounting.

Its CoolMOS C3 technology provides improved switching efficiency, reduced switching losses, and heat dissipation, ideal for circuits aiming to optimize power density and energy consumption. The MOSFET operates with an enhancement mode channel and a low forward voltage of 1.2 V, which helps maintain performance in high-frequency switching environments.

Specifications include a maximum power dissipation of 30.5 W, a typical gate charge of 12 nC at Vgs, and maximum gate-source voltage tolerance of -30 V to +30 V, making it reliable for demanding electronic control applications. The operating temperature range from -55°C to 150°C ensures durability across varied industrial and commercial environments.

This MOSFET is non-automotive grade and does not possess additional standards or approvals, making it best suited for general electronic and power switching roles.

Application sectors benefited by this MOSFET include industrial power supplies, motor drives, inverter circuits, and consumer electronics. It allows design engineers to optimize energy efficiency and thermal management in their systems.

This MOSFET uses CoolMOS C3 technology for enhanced efficiency and low conduction losses. Designed for through-hole mounting with a compact TO-220 package of dimensions 16.15mm height, 10.85mm length, and 4.85mm width. Features a maximum power dissipation of 30.5 W suitable for power management applications.

Operates in an enhancement channel mode with a forward voltage of 1.2 V for optimized switching performance. Capable of functioning within a temperature range from -55°C to 150°C for reliable industrial use. Maximum drain-source resistance is 2.7 mΩ ensuring low on-state losses.

Maximum gate-source voltage rating is -30 V to +30 V securing robust gate protection. Typical gate charge of 12 nC supports fast switching speeds essential in power conversion circuits. No automotive standard compliance and no special certifications.

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