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Infineon HEXFET N-Channel MOSFET, 160 A, 55 V, Enhancement Mode, 3-Pin TO-247 IRFP1405PBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 5.31mm
Length 15.29mm
Model IRFP1405PBF
Width 19.71mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 160A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 5.3mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 310W
Typical Gate Charge Qg @ Vgs 120nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • High continuous drain current rating of 160 A suitable for power applications.
  • Maximum drain-source voltage of 55 V for robust operation.
  • Enhancement mode device ensuring low on-resistance.
  • TO-247 through-hole package providing excellent thermal performance.
  • Maximum power dissipation of 310 W enabling high power handling.
  • Typical gate charge of 120 nC for efficient switching.
  • Operates reliably between -55°C and 175°C temperatures.
  • Maximum drain-source resistance of 5.3 milliohms for low conduction loss.

Product Description

Infineon IRFP1405PBF HEXFET N-Channel MOSFET is designed for high efficiency and power density in power electronics applications. It supports a maximum continuous drain current of 160 A and a drain-source voltage of 55 V, making it suitable for industrial, automotive, and power management use cases. The device uses enhancement mode channel and comes in a 3-pin TO-247 through-hole package allowing effective heat dissipation and mechanical stability.

This MOSFET features a low on-resistance of 5.3 mΩ, enabling reduced conduction losses during switching operations. Its gate threshold voltage supports up to ±20 V, providing robust gate control. The device can handle power dissipation up to 310 W and operates reliably in a wide temperature range from -55°C to 175°C, making it suitable for demanding environments in manufacturing, HVAC systems, and laboratory power circuits.

The typical gate charge of 120 nC ensures efficient switching performance, enhancing system efficiency. The compact physical dimensions (15.29 mm length, 19.71 mm width, 5.31 mm height) facilitate integration into space-constrained PCB layouts. This MOSFET is part of Infineon's HEXFET series, known for benchmark low resistance and reliability in power semiconductor applications.

High continuous drain current rating of 160 A suitable for power applications. Maximum drain-source voltage of 55 V for robust operation. Enhancement mode device ensuring low on-resistance. TO-247 through-hole package providing excellent thermal performance.

Maximum power dissipation of 310 W enabling high power handling. Typical gate charge of 120 nC for efficient switching. Operates reliably between -55°C and 175°C temperatures. Maximum drain-source resistance of 5.3 milliohms for low conduction loss.

Supports gate voltages from -20 V to +20 V. Compact dimensions with length 15.29 mm, width 19.71 mm, and height 5.31 mm.

This Infineon HEXFET MOSFET is ideal for applications in industrial power management, automotive electronics, laboratory power supplies, and HVAC systems where high current handling and robustness are essential. EnvMart offers this device as a reliable component to improve efficiency and system longevity.

Infineon HEXFET N-Channel MOSFET, 160 A, 55 V, Enhancement Mode, 3-Pin TO-247 IRFP1405PBF
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Frequently Asked Questions

The maximum continuous drain current rating is 160 A, making it suitable for high power applications.

The maximum drain-source voltage is 55 V, ensuring robust operation in various applications.

It features a low on-resistance of 5.3 milliohms, which helps reduce conduction losses during operation.

This MOSFET comes in a TO-247 through-hole package, providing excellent thermal performance and mechanical stability.

The maximum power dissipation is 310 W, allowing it to handle high power levels effectively.

The typical gate charge is 120 nC, which contributes to efficient switching performance.

It operates reliably between -55°C and 175°C, making it suitable for demanding environments.

The dimensions are 15.29 mm in length, 19.71 mm in width, and 5.31 mm in height.

The maximum gate-source voltage supported is -20 V to +20 V, providing robust gate control.

It is commonly used in industrial power management, automotive electronics, laboratory power supplies, and HVAC systems.

This model has a pin count of 3, suitable for its TO-247 package type.

It utilizes an N-channel enhancement mode, which is designed for high efficiency in power applications.

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