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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.31mm |
| Length | 15.29mm |
| Model | IRFP1405PBF |
| Width | 19.71mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 160A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 5.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 310W |
| Typical Gate Charge Qg @ Vgs | 120nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Infineon IRFP1405PBF HEXFET N-Channel MOSFET is designed for high efficiency and power density in power electronics applications. It supports a maximum continuous drain current of 160 A and a drain-source voltage of 55 V, making it suitable for industrial, automotive, and power management use cases. The device uses enhancement mode channel and comes in a 3-pin TO-247 through-hole package allowing effective heat dissipation and mechanical stability.
This MOSFET features a low on-resistance of 5.3 mΩ, enabling reduced conduction losses during switching operations. Its gate threshold voltage supports up to ±20 V, providing robust gate control. The device can handle power dissipation up to 310 W and operates reliably in a wide temperature range from -55°C to 175°C, making it suitable for demanding environments in manufacturing, HVAC systems, and laboratory power circuits.
The typical gate charge of 120 nC ensures efficient switching performance, enhancing system efficiency. The compact physical dimensions (15.29 mm length, 19.71 mm width, 5.31 mm height) facilitate integration into space-constrained PCB layouts. This MOSFET is part of Infineon's HEXFET series, known for benchmark low resistance and reliability in power semiconductor applications.
High continuous drain current rating of 160 A suitable for power applications. Maximum drain-source voltage of 55 V for robust operation. Enhancement mode device ensuring low on-resistance. TO-247 through-hole package providing excellent thermal performance.
Maximum power dissipation of 310 W enabling high power handling. Typical gate charge of 120 nC for efficient switching. Operates reliably between -55°C and 175°C temperatures. Maximum drain-source resistance of 5.3 milliohms for low conduction loss.
Supports gate voltages from -20 V to +20 V. Compact dimensions with length 15.29 mm, width 19.71 mm, and height 5.31 mm.
This Infineon HEXFET MOSFET is ideal for applications in industrial power management, automotive electronics, laboratory power supplies, and HVAC systems where high current handling and robustness are essential. EnvMart offers this device as a reliable component to improve efficiency and system longevity.
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