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Infineon OptiMOS N-Channel MOSFET 40 A 30 V Enhancement Mode 8-Pin TDSON BSZ065N03LSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | BSZ065N03LSATMA1 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 8.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 26W |
| Typical Gate Charge Qg @ Vgs | 5.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Designed with enhancement mode for efficient switching performance.
- Maximum power dissipation rated at 26 watts for reliable thermal handling.
- Low Rds(on) resistance of 8.6 milliohms ensures minimal conduction losses.
- Operates within a temperature range from -55°C to 150°C for robust performance.
- Typical gate charge of 5.2 nanocoulombs at 5 V gate voltage enables fast switching.
- Compact dimensions of 3.4 mm by 3.4 mm by 1.1 mm in a surface mount footprint.
- Suitable for high efficiency and power density applications in electronics and power management.
- RoHS compliant lead-free green package for environmental safety.
Product Description
Infineon BSZ065N03LSATMA1 is a high performance OptiMOS N-Channel MOSFET designed for demanding power electronics applications requiring very low on-resistance and high current capability. This device supports a maximum continuous drain current of 40 A and a maximum drain-source voltage of 30 V.
Featuring enhancement mode operation, the MOSFET is housed in an 8-pin TDSON surface mount package with dimensions of 3.4 mm length and width and 1.1 mm height, enabling compact PCB layouts. The ultra-low Rds(on) of 8.6 milliohms minimizes conduction losses to enhance overall system efficiency.
Key electrical ratings include a maximum power dissipation of 26 watts and gate charge of 5.2 nC at Vgs=5V. The MOSFET can operate safely in environments ranging from -55°C to 150°C, meeting industrial and automotive temperature standards (though this device is not automotive AEC Q101 certified).
This device is lead-free, green packaged, and suitable for surface mount technology assembly. It is ideal for use in applications such as voltage regulation modules, power conversion, and other advanced power management circuits within industrial, consumer electronics, and computing fields.
Enhancement mode N-channel MOSFET providing fast switching. 40 A continuous drain current at 30 V drain-source voltage. Low on-resistance of 8.6 milliohms reduces power loss. Package: 8-pin TDSON surface mount. Operating temperature from -55°C up to 150°C.
Power dissipation capability of 26 W. Typical gate charge of 5.2 nC supports high-speed switching. Lead-free and RoHS-compliant green packaging.
This Infineon OptiMOS MOSFET is a precision component engineered for high efficiency and compact power electronics. Browse our Electronics & Electricals category at EnvMart for similar semiconductor components and power management devices.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A.
It can handle a maximum drain-source voltage of 30 V.
The Rds(on) resistance is 8.6 milliohms, which helps minimize conduction losses.
It operates within a temperature range from -55°C to 150°C.
The dimensions of the TDSON package are 3.4 mm in length and width, and 1.1 mm in height.
The typical gate charge at a 5 V gate voltage is 5.2 nanocoulombs.
The maximum power dissipation capability is rated at 26 watts.
Yes, this model is RoHS compliant and comes in a lead-free green package.
This device supports surface mount technology (SMT) assembly.
It is suitable for applications such as voltage regulation modules, power conversion, and advanced power management circuits.
The channel type of this device is N-channel, designed for enhancement mode operation.
The maximum gate-source voltage is -20 V to +20 V.
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