Infineon OptiMOS 3 N-Channel MOSFET, 130 A, 150 V Enhancement Mode, 7-Pin TO-263 IPB065N15N3GATMA1

Infineon IPB065N15N3GATMA1 is an advanced OptiMOS 3 N-Channel MOSFET designed for high efficiency and power density in industrial and electronic applications. It supports a maximum continuous drain current of 130 A and a drain-source voltage of 150 V, fitting power switching demands in sectors such as power supplies, motor control, and automotive electronics.

This MOSFET uses enhancement mode channel operation combined with an extremely low on-resistance of 6.8 mΩ, minimizing conduction losses to improve overall system efficiency. It features a 7-pin TO-263 package type designed for surface mounting, enabling compact and reliable PCB integration.

The device supports a maximum power dissipation of 300 W, making it robust for applications requiring sustained high power. Its gate charge of 70 nC ensures rapid switching, which is important in high-frequency power conversion and switching circuits.

Operating temperatures range from a minimum of -55°C up to a maximum of 175°C, ensuring durability and stable performance under harsh operating conditions. The gate-source voltage rating of -20 V to +20 V provides protection for controlling circuitry.

With dimensions measuring 10.31 mm in length, 9.45 mm in height, and 4.57 mm in width, this MOSFET can be easily incorporated into compact electronic designs. While lacking specific automotive certification, it remains suitable for a wide range of power control and industrial electronic applications.

Enhancement mode N-Channel MOSFET for efficient power switching. Low drain-source resistance (6.8 mΩ) minimizes energy losses. High maximum continuous drain current of 130 A supports heavy loads. Wide voltage rating of 150 V allows versatile application.

Compact 7-pin TO-263 surface mount package. Robust maximum power dissipation of 300 W for durability. Wide ambient temperature range (-55°C to 175°C) for harsh environments. Fast switching enabled by a typical gate charge of 70 nC.

Safe gate drive with ±20 V maximum gate-source voltage.

These features make the Infineon IPB065N15N3GATMA1 suitable for use in applications including industrial power management, high-performance motor drives, consumer electronics, and other semiconductor switching solutions. This MOSFET contributes to improved energy efficiency and system reliability.

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