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onsemi PowerTrench N-Channel MOSFET 6.1 A 60 V Enhancement Mode 8-Pin SOIC FDS5351
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.57mm |
| Length | 4.9mm |
| Model | FDS5351 |
| Width | 3.9mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 58.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Features an 8-pin SOIC surface mount package.
- Maximum drain-source resistance of 58.8 milliohms enhances low power loss.
- Capable of dissipating up to 5 W power under operating conditions.
- Typical gate charge is 19 nC at Vgs, facilitating fast switching.
- Wide operating temperature range from -55°C to 150°C.
- Forward voltage of 1.3 V supports efficient conduction.
- Maximum gate-source voltage rating of -20V to +20V ensures robust gate control.
- Designed for surface mount applications in electronic circuits.
Product Description
onsemi presents the FDS5351 PowerTrench N-Channel MOSFET, designed for reliable and efficient switching applications. This enhancement mode transistor supports a maximum continuous drain current (Id) of 6.1 A and a maximum drain-source voltage (Vds) of 60 V, making it suitable for medium power electronic circuits.
Encased in an 8-pin SOIC surface mount package, the device integrates a low on-resistance (Rds(on)) of 58.8 milliohms, allowing for efficient power dissipation with a maximum power rating of 5 W. Its typical gate charge of 19 nC at Vgs reduces switching losses, optimizing circuit performance in high-frequency applications.
The transistor operates safely within a wide temperature range from -55°C to 150°C, enhancing its applicability in harsh industrial or automotive environments. Its maximum gate-source voltage of ±20 V ensures durability and stable operation under varying drive conditions. The physical dimensions of approximately 4.9 mm length, 3.9 mm width, and 1.57 mm height allow for compact PCB design and easy integration.
This MOSFET is ideal for use in power management, motor control, and switching regulators in industrial, manufacturing, and automotive electronics sectors. Features an 8-pin SOIC surface mount package. Maximum drain-source resistance of 58.8 milliohms enhances low power loss.
Capable of dissipating up to 5 W power under operating conditions. Typical gate charge is 19 nC at Vgs, facilitating fast switching. Wide operating temperature range from -55°C to 150°C. Forward voltage of 1.3 V supports efficient conduction.
Maximum gate-source voltage rating of -20V to +20V ensures robust gate control. Dimensions approximately 4.9 mm length, 3.9 mm width, and 1.57 mm height. Designed for surface mount applications in electronic circuits.
onsemi's PowerTrench series offers reliable solutions for semiconductor discrete components. For more products and detailed industrial semiconductor components, browse EnvMart's extensive catalog.
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Frequently Asked Questions
The maximum continuous drain current (Id) for this model is 6.1 A.
It can handle a maximum drain-source voltage (Vds) of 60 V.
The typical gate charge (Qg) at Vgs is 19 nC.
The operating temperature range is from -55°C to 150°C.
This model can dissipate up to 5 W of power under operating conditions.
The dimensions are approximately 4.9 mm in length, 3.9 mm in width, and 1.57 mm in height.
It is encased in an 8-pin SOIC surface mount package.
The maximum gate-source voltage rating is -20 V to +20 V.
The forward voltage (Vf) is 1.3 V.
The maximum drain-source resistance (Rds(on)) is 58.8 milliohms.
This model features an N-channel type.
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