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onsemi PowerTrench Type P-Channel MOSFET 8.8 A 30 V Enhancement 8-Pin SOIC SI4435DY
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.57mm |
| Length | 4.9mm |
| Model | SI4435DY |
| Width | 3.9mm |
| Mount Type | Solder |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.8A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 35mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features PowerTrench® technology for enhanced efficiency and power density.
- Designed for fast switching with low gate charge and soft reverse recovery diode.
- Enhancement mode P-channel MOSFET with 35 mΩ maximum Rds(on).
- Operates from -55°C to 175°C with 2.5 W maximum power dissipation.
- Compact SOIC package with dimensions 4.9 mm length and 3.9 mm width.
- Maximum gate-source voltage ±20 V and typical gate charge 17 nC.
- Suitable for synchronous rectification and power management applications.
- Industrial and automotive applications without automotive standard certification.
Product Description
onsemi SI4435DY PowerTrench Type P-Channel MOSFET is a semiconductor device designed for high-efficiency switching and power management applications. With a continuous drain current of 8.8 A and drain-source voltage rating of 30 V, this enhancement mode MOSFET operates efficiently in compact 8-pin SOIC packaging.
The PowerTrench® technology integrated into this MOSFET enables reduced gate charge and soft reverse recovery body diode characteristics, improving switching speed and system efficiency especially in synchronous rectification circuits. Its shielded-gate architecture minimizes losses delivering an excellent Figure of Merit (FOM).
Operating temperature ranges from -55°C to 175°C, with a maximum power dissipation of 2.5 W, making it reliable for industrial, laboratory, manufacturing, and power supply environments. The device features a maximum drain-source resistance of 35 mΩ and gate-source voltage tolerance of ±20 V.
The compact SOIC package measures 4.9 mm in length, 3.9 mm in width, and 1.57 mm in height, facilitating easy PCB mounting with solder mount type. Although it lacks automotive certification, it suits various commercial and industrial power conversion and management tasks.
PowerTrench® technology enhances system efficiency and power density. Low gate charge and soft body diode allow fast switching times. Compact 8-pin SOIC package enables easy PCB integration. Wide operating temperature from -55°C to 175°C ensures robustness.
Maximum continuous drain current of 8.8 A supports moderate power loads. Reliable enhancement mode P-channel operation for switching applications. Typical forward voltage of 1.2 V across the MOSFET ensures low losses. Suitable for industrial, laboratory, commercial, and power supply applications.
This MOSFET is a versatile choice for engineers looking to optimize power conversion efficiency in their designs. Explore more semiconductor and power management devices within the onsemi product family at EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.8 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
The typical gate charge for this unit is 17 nC at the specified gate-source voltage.
The maximum operating temperature for this model is 175°C.
The dimensions of the SOIC package are 4.9 mm in length, 3.9 mm in width, and 1.57 mm in height.
The maximum power dissipation for this MOSFET is 2.5 W.
The maximum gate-source voltage tolerance for this unit is ±20 V.
This model has a maximum drain-source resistance of 35 mΩ.
The MOSFET uses a solder mount type for installation.
This MOSFET is suitable for synchronous rectification and power management applications, particularly in industrial and commercial settings.
The channel type of this MOSFET is P-channel, operating in enhancement mode.
This model features PowerTrench® technology, which enhances efficiency and power density.
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