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onsemi UniFET N-Channel MOSFET, 33 A, 250 V Enhancement Mode, 3-Pin TO-220F FDPF33N25T
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FDPF33N25T |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 94mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 36.8nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Features a low on-state resistance of 94 milliohms for efficient power control.
- Uses a TO-220F package with through-hole mount and 3 pins.
- Operates in enhancement mode with a maximum power dissipation of 37 W.
- Wide operating temperature range from -55°C up to 150°C.
- Typical gate charge of 36.8 nC enables fast switching.
- Built-in internal gate-source ESD diode resistant to high surge voltages.
- Suitable for power factor correction, flat panel displays, power supplies and electronic ballast circuits.
- Maximum gate-source voltage ±30 V and forward voltage of 1.4 V ensure robust operation.
Product Description
onsemi FDPF33N25T UniFET N-Channel MOSFET is a high-performance enhancement mode transistor designed for efficient power switching. Featuring a maximum continuous drain current of 33 amperes and a drain-source voltage rating of 250 volts, it suits demanding industrial and electronic applications.
The MOSFET is housed in a TO-220F package with 3 through-hole pins, providing ease of mounting and robust mechanical stability. It offers a low maximum drain-source resistance of 94 milliohms, enabling minimal conduction losses and high efficiency in power management.
The device supports a broad operating temperature range from -55°C to 150°C, making it suitable for harsh environments. Fast switching is facilitated by its typical gate charge of 36.8 nanocoulombs and maximum gate-source voltage of ±30 volts, ensuring reliable performance in switching power converter circuits and electronic ballasts.
Designed as part of the UniFET series, it incorporates an internal gate-source ESD diode capable of withstanding surge stresses over 2000 V HBM, improving durability and system reliability. The compact physical dimensions of 16.07 mm height, 10.36 mm length, and 4.9 mm width allow integration into space-constrained applications.
Low on-resistance enhances power efficiency. Wide temperature tolerance ensures durability. Robust gate voltage ratings for surge resilience. Compact TO-220F form factor simplifies assembly. Applicable to power factor correction and flat panel display power supplies.
This MOSFET is ideal for industrial, manufacturing, power supply, and commercial electronics environments needing a reliable and efficient N-Channel power transistor. Enhance your designs using onsemi's UniFET technology for superior switching performance with low conduction losses.
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Frequently Asked Questions
The maximum continuous drain current for this model is 33 amperes.
It has a maximum drain-source voltage rating of 250 volts.
The maximum drain-source resistance is 94 milliohms, which helps in minimizing conduction losses.
This MOSFET is housed in a TO-220F package and features a through-hole mount with 3 pins.
It operates within a wide temperature range from -55°C to 150°C.
The typical gate charge is 36.8 nanocoulombs, enabling fast switching capabilities.
The maximum power dissipation is rated at 37 watts.
It supports a maximum gate-source voltage of ±30 volts.
This model is suitable for applications such as power factor correction, flat panel displays, power supplies, and electronic ballast circuits.
The forward voltage is 1.4 volts.
It includes a built-in internal gate-source ESD diode that can withstand surge stresses over 2000 V HBM, enhancing durability and system reliability.
The dimensions are 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
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