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Vishay Silicon Junction Switching Diode Single 150 mA 2-Pin SOD-123 50 V 1N4151WS-G3-08

Category Discrete Semiconductors Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1.25mm
Length 2.85mm
Model 1N4151WS-G3-08
Width 1.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Case DO-204AL, molded epoxy over glass body
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 2
Maximum Power Dissipation Pd 410W
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 150mA
Maximum Peak Reverse Repetitive Voltage Vrrm 50V
Vishay Silicon Junction, Single, 150 mA, 2-Pin 50 V SOD-123 1N4151WS-G3-08Brand Vishay

Key Features

  • Superectifier structure provides high reliability in operation.
  • Glass-passivated junction ensures low leakage and enhanced durability.
  • Fast switching with a peak reverse recovery time of 4 ns improves circuit efficiency.
  • Low typical leakage current below 0.2 microamperes supports sensitive applications.
  • High forward surge capability allows transient tolerance up to 2 A.
  • Surface mount SOD-123 package with matte tin plated leads for reliable soldering.
  • Wide operating temperature range from -55°C to 150°C suitable for varied environments.
  • Color band marking clearly indicates cathode polarity for proper installation.

Product Description

Vishay 1N4151WS-G3-08 is a surface mount silicon junction switching diode designed for precision fast switching applications. It features a superectifier structure for enhanced reliability and a cavity-free glass-passivated junction that minimizes leakage currents and improves longevity.

The diode supports a maximum forward current of 150 mA and can withstand peak reverse voltages up to 50 V. Its peak reverse recovery time of 4 ns enables rapid switching, making it ideal for efficient circuit performance in industrial, telecommunications, and consumer electronics applications.

The SOD-123 plastic package, measuring 2.85 mm x 1.7 mm x 1.25 mm, ensures compact mounting with matte tin plated leads that comply with J-STD-002 for solderability and J-STD-201 class 1A whisker guidelines. The device tolerates operating temperatures from -55°C to 150°C, supporting diverse environmental conditions.

Key features include low leakage current typically less than 0.2 μA, fast switching capabilities, and high forward surge current rating of 2 A. The diode package has a color band marking the cathode end for polarity identification and is made with a DO-204AL case molded epoxy over a glass body, ensuring ruggedness and electrical stability.

Typical applications comprise high voltage rectification duties in G2 grids for CRT and television devices, use in snubber circuits for camera flash units, and other demanding fast switching roles in electronics manufacturing and repair.

The device is categorized under Discrete Semiconductors and is manufactured in China by Vishay in compliance with RoHS directives as part of their commercial grade offerings. Its reliable electrical characteristics and compact surface mount design make it suitable for modern electronic assemblies in industrial, laboratory, and commercial environments.

Superectifier structure for high reliability condition. Cavity-free glass-passivated junction reduces leakage. Fast switching with 4 ns peak reverse recovery time. Low leakage current typically under 0.2 μA. High forward surge capability of 2 A peak.

SOD-123 surface mount package with matte tin plated leads. Operating temperature range from -55°C to 150°C. Compact dimensions of 2.85 mm length x 1.7 mm width x 1.25 mm height. Color band denotes cathode end for polarity.

Ideal for CRT G2 grid rectification and snubber circuits. Explore the full Vishay range of discrete semiconductor components and switching diodes with EnvMart's secure procurement platform for industrial electronics.

Vishay Silicon Junction Switching Diode Single 150 mA 2-Pin SOD-123 50 V 1N4151WS-G3-08
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Frequently Asked Questions

The maximum forward current of the Vishay 1N4151WS-G3-08 diode is 150 mA.

This model features a peak reverse recovery time of 4 ns, which enhances its fast switching capabilities.

The operating temperature range of the 1N4151WS-G3-08 diode is from -55°C to 150°C.

The dimensions of the SOD-123 package are 2.85 mm in length, 1.7 mm in width, and 1.25 mm in height.

The maximum peak reverse repetitive voltage for this diode is 50 V.

This diode uses surface mounting (SMD) technology, specifically in the SOD-123 package.

The typical leakage current for the 1N4151WS-G3-08 diode is less than 0.2 μA.

The maximum forward voltage drop of this diode is 1 V.

The peak non-repetitive forward surge current rating for this diode is 2 A.

The diode features a DO-204AL case made of molded epoxy over a glass body, ensuring electrical stability.

The cathode polarity is indicated by a color band marking on the diode package.

This diode is typically used in high voltage rectification duties, snubber circuits for camera flash units, and other fast switching applications in electronics.

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