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Vishay Silicon Junction Switching Diode Single 150 mA 50 V Surface Mount SOD-123 1N4151WS-G3-08

Category Discrete Semiconductors Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1.25mm
Length 2.85mm
Model 1N4151WS-G3-08
Width 1.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Case DO-204AL, molded epoxy over glass body
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 2
Maximum Power Dissipation Pd 410W
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 150mA
Maximum Peak Reverse Repetitive Voltage Vrrm 50V

Key Features

  • Features a superectifier structure for high reliability and low leakage current.
  • Glass passivated junction ensures cavity-free, robust diode performance.
  • Fast switching capability with peak reverse recovery time of 4 nanoseconds.
  • Compact surface mount design in SOD-123 package suitable for automated PCB assembly.
  • Operates reliably over a wide temperature range from -55°C to 150°C.
  • High surge current capability with peak non-repetitive forward surge current of 2 A.
  • Matte tin plated leads provide excellent solderability per industry standards.
  • Color band on diode body indicates cathode polarity with molded epoxy over glass body casing.

Product Description

Vishay 1N4151WS-G3-08 Silicon Junction Switching Diode is a high-performance single diode designed for industrial and electronic applications requiring fast switching and reliable operation up to 150 mA forward current and 50 V peak reverse voltage. Packaged in a low-profile SOD-123 surface mount case with a glass-passivated cavity-free junction, this diode delivers exceptional stability and low leakage current typically less than 0.2 μA.

The diode features a superectifier structure which enhances reliability and surge capacity. It supports a peak non-repetitive forward surge current of 2 A and has a low forward voltage drop max of 1 V, ensuring efficient power dissipation rated at 410 W. The switching speed is optimized, having a peak reverse recovery time of only 4 nanoseconds, making it ideal for high-frequency switching and rectification tasks.

Mechanical construction includes a DO-204AL glass epoxy body rated to UL 94 V-0 flammability standards. The leads are matte tin plated and solderable per J-STD-002 and JESD 22-B102 standards. The cathode is easily identified via the color band marking.

Typical applications include high voltage rectification of G2 grid in CRT and TV technology, and snubber circuits for camera flashes. Operating temperature withstands from -55°C to 150°C, suitable for automotive and commercial electronics environments.

This diode is RoHS compliant and manufactured in China. Package contains diode in tape packaging ready for automated PCB assembly, facilitating efficient production processes. Features a superectifier structure for high reliability and low leakage current.

Glass passivated junction ensures cavity-free, robust diode performance. Fast switching capability with peak reverse recovery time of 4 nanoseconds. Compact surface mount design in SOD-123 package suitable for automated PCB assembly.

Operates reliably over a wide temperature range from -55°C to 150°C. High surge current capability with peak non-repetitive forward surge current of 2 A. Matte tin plated leads provide excellent solderability per industry standards.

Color band on diode body indicates cathode polarity with molded epoxy over glass body casing. Typical forward voltage drop maximum 1 V for efficient power dissipation of up to 410 W. Ideal for applications such as high voltage rectification, snubber circuits, and electronic switching.

Explore more Vishay semiconductor components at EnvMart and leverage superior quality for industrial, telecommunications, consumer electronics, and automotive system designs.

Explore more products in our Discrete Semiconductors category.

Vishay Silicon Junction Switching Diode Single 150 mA 50 V Surface Mount SOD-123 1N4151WS-G3-08
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Frequently Asked Questions

The maximum forward current rating of this diode is 150 mA.

The peak reverse recovery time for this model is 4 nanoseconds.

The maximum peak reverse repetitive voltage for this diode is 50 V.

The dimensions of the SOD-123 package are 2.85 mm in length, 1.7 mm in width, and 1.25 mm in height.

This diode operates reliably over a temperature range from -55°C to 150°C.

The maximum power dissipation rating for this diode is 410 W.

The cathode polarity is indicated by a color band on the diode body.

This model supports surface mounting.

The peak non-repetitive forward surge current rating is 2 A.

The diode features a glass passivated junction with a molded epoxy over glass body casing.

The leads are matte tin plated and solderable per J-STD-002 and JESD 22-B102 standards.

This diode is suitable for applications such as high voltage rectification and snubber circuits for camera flashes.

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