Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V Enhancement Mode, 3-Pin TO-263 Package CSD19536KTTT

Texas Instruments CSD19536KTTT is a high-power NexFET N-Channel MOSFET designed for surface mount applications requiring efficient power management and high current handling.

This MOSFET supports a maximum continuous drain current of 272 amperes and a drain-source voltage of 100 volts, making it suitable for demanding industrial, automotive, and power conversion systems.

The enhancement mode N-channel transistor uses Texas Instruments' NexFET technology which ensures low conduction losses with a maximum drain-source resistance of only 2.8 milliohms, improving overall system efficiency and thermal performance.

Its TO-263 package with 3 pins facilitates compact layout and automated assembly on printed circuit boards in power supply units, motor drives, and power inverters. Capable of dissipating up to 375 watts, it can operate safely across a wide temperature range from -55°C to 175°C, providing robust performance in harsh environments.

The device features a typical gate charge of 118 nanocoulombs at gate threshold voltage, allowing fast switching speeds necessary in high-frequency power applications. It also supports a maximum gate-source voltage of -20 to +20 volts, ensuring gate reliability under transient conditions.

The compact physical dimensions (10.67mm length, 9.65mm width, 4.83mm height) enable efficient PCB space utilization. Capable of handling a maximum continuous drain current of 272 amperes. Operates at a maximum drain-source voltage of 100 volts.

Constructed with an enhancement mode N-channel design for efficient switching. Compact 3-pin TO-263 surface mount package for easy PCB integration. Features low maximum drain-source resistance of 2.8 milliohms for minimal power loss.

Maximum power dissipation rating of 375 watts to handle high power applications. Operates reliably from -55°C to 175°C for extended temperature range usage. Typical gate charge of 118 nanocoulombs at Vgs for fast switching capabilities.

Maximum gate-source voltage rating between -20 V to +20 V provides robustness. Physical dimensions: Length 10.67mm, Width 9.65mm, Height 4.83mm. This product is ideal for industrial power management, automotive electronics, power supplies, and renewable energy converters where efficient, durable MOSFETs are required.

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