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Infineon CoolMOS C7 N-Channel MOSFET 13 A 700 V Enhancement Mode 3-Pin TO-247 IPW65R190C7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.21mm |
| Length | 16.13mm |
| Model | IPW65R190C7XKSA1 |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | CoolMOS C7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 72W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 0.9V |
Key Features
- The device features enhancement mode channel operation for efficient power switching.
- Maximum power dissipation is rated at 72 W.
- Low conduction resistance of 190 mΩ improves efficiency.
- Wide operating temperature range from -55°C to 150°C.
- Compact 3-pin TO-247 package for through-hole mounting.
- Fast switching enabled by 23 nC typical gate charge.
- Robust gate voltage tolerance of -30 V to +30 V.
- Forward voltage of 0.9 V reduces conduction losses.
Product Description
Infineon IPW65R190C7XKSA1 CoolMOS C7 N-Channel MOSFET is a high-performance power transistor designed for efficient switching and power conversion. It features a 13 ampere maximum continuous drain current and a 700 volt maximum drain-source voltage, housed in a compact 3-pin TO-247 package suitable for through-hole mounting.
This enhancement mode MOSFET offers a low on-resistance of 190 mΩ, which helps reduce conduction losses and improve overall efficiency in power management applications. The device’s maximum power dissipation is rated at 72 watts, ensuring reliable operation even under demanding thermal conditions.
The MOSFET operates over a wide temperature range from -55°C up to 150°C, making it suitable for industrial and automotive environments. Its typical gate charge of 23 nC enables fast switching, which is critical for efficient energy conversion in various electronic circuits. The gate-source voltage rating of -30 V to +30 V provides robust gate control for the device.
Physical dimensions include a length of 16.13 mm, width of 21.1 mm, and height of 5.21 mm, facilitating easy integration into power electronics assemblies. The forward voltage of 0.9 V assists in minimizing voltage drop during operation.
Common applications for the Infineon CoolMOS C7 series include power supplies, industrial power conversion systems, automotive electronics, and other demanding electronic systems requiring high efficiency and reliability.
The device features enhancement mode channel operation for efficient power switching. Maximum power dissipation is rated at 72 W. Low conduction resistance of 190 mΩ improves efficiency. Wide operating temperature range from -55°C to 150°C.
Compact 3-pin TO-247 package for through-hole mounting. Fast switching enabled by 23 nC typical gate charge. Robust gate voltage tolerance of -30 V to +30 V. Forward voltage of 0.9 V reduces conduction losses. Ideal for industrial, automotive, and power management applications.
Explore more Infineon MOSFETs and semiconductor components on EnvMart for your advanced electronics projects and industrial designs.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon CoolMOS C7 N-Channel MOSFET is 13 A.
This model has a maximum drain-source voltage of 700 V.
The typical gate charge for this MOSFET is 23 nC.
The maximum power dissipation for this device is rated at 72 W.
The dimensions of the TO-247 package are 16.13 mm in length, 21.1 mm in width, and 5.21 mm in height.
The operating temperature range for this MOSFET is from -55°C to 150°C.
This model features a low conduction resistance of 190 mΩ.
The gate-source voltage tolerance for this device is -30 V to +30 V.
This MOSFET supports through-hole mounting.
The forward voltage for this MOSFET is 0.9 V.
This MOSFET is suitable for applications in power supplies, industrial power conversion systems, and automotive electronics.
This MOSFET has an N-channel type.
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