Infineon CoolMOS CP N-Channel MOSFET, 25 A, 650 V, Enhancement Mode, 3-Pin TO-247 IPW60R125CPFKSA1

Infineon IPW60R125CPFKSA1 CoolMOS CP N-Channel MOSFET is a high-performance discrete semiconductor device engineered for efficient power management in industrial, electronic, and power supply applications. This device is designed with an enhancement mode N-channel transistor housed in a 3-pin TO-247 through-hole package, offering convenient mounting in printed circuit boards.

It supports a maximum continuous drain current of 25 amperes and can withstand a drain-to-source voltage of up to 650 volts, making it suitable for medium to high voltage power circuits. The device delivers a maximum power dissipation of 208 watts, enabling it to handle significant power loads reliably within its operating temperature range of -55°C to 150°C.

The typical gate charge of 53 nanocoulombs at gate-source voltage enables rapid switching, which is critical for efficient power conversion and minimizing switching losses. Its gate-source voltage tolerance ranges from -30 V to +30 V, providing robust gate drive margins. Additionally, the forward voltage drop of 1.2 volts assists in reducing conduction losses during operation, improving overall circuit efficiency.

Physical dimensions are compact with a length of 16.13 millimeters, width of 5.21 millimeters, and height of 21.1 millimeters, making it adaptable to various layout constraints in electronic design.

This MOSFET does not carry automotive qualification standards but finds extensive use in industrial power supplies, laboratory equipment, manufacturing control systems, and commercial electronic devices requiring reliable and efficient power switching capabilities.

Features enhancement mode channel type for efficient switching. Mounts through hole in TO-247 package ensuring easy integration. Maximum power dissipation is 208 W suitable for high power applications. Typical gate charge at Vgs is 53 nC enabling fast switching performance.

Supports a maximum gate-source voltage range of -30 V to +30 V. Operates reliably between -55°C and 150°C temperature range. Forward voltage drop of 1.2 V reduces conduction losses. Compact dimensions: Length 16.13 mm, Width 5.21 mm, Height 21.1 mm.

Designed without automotive standard but suitable for industrial and power electronics use. Explore a wide range of Infineon power semiconductors and related electronic components at EnvMart for industrial and commercial applications.