Infineon CoolMOS C6 N-Channel MOSFET 38 A 650 V Enhancement 3-Pin TO-247 IPW60R099C6FKSA1

Infineon IPW60R099C6FKSA1 is a CoolMOS C6 series N-Channel MOSFET designed for high efficiency and power density in industrial and electronic power conversion applications. It supports a maximum continuous drain current of 38 A and a maximum drain-source voltage of 650 V. This device belongs to the enhancement mode MOSFET family, featuring a 3-pin TO-247 package type that allows for reliable through-hole mounting in power circuits.

The MOSFET is characterized by a low typical gate charge of 119 nC at Vgs, enabling fast switching performance and reducing switching losses in high-frequency applications. With a maximum power dissipation rating of 278 W, the device is capable of handling demanding power loads while maintaining thermal stability up to 150 °C operating temperature.

Designed without automotive standard qualification for general industrial and commercial electronics, the package dimensions are length 16.13 mm, width 5.21 mm, and height 21.1 mm, providing a compact footprint suitable for densely populated circuit boards.

The device features a channel mode enhancement type with a maximum drain-source resistance of 99 milliohms, ensuring low conduction losses. It also supports a robust gate-source voltage range of -30 to +30 V and forward voltage of 0.9 V. The operating temperature range extends from -55 °C to 150 °C, making it suitable for varied industrial environments.

High-performance N-channel enhancement mode MOSFET suitable for power applications. Maximum continuous drain current of 38 amperes ensures efficient power handling. Maximum drain-source voltage of 650 volts supports high voltage operations.

Low typical gate charge enables fast switching speed and reduced losses. Rated maximum power dissipation of 278 watts for high power density designs. Through-hole mount TO-247 package for secure mechanical installation. Operating temperature range from -55 °C to 150 °C allows wide environmental use.

Low maximum drain-source resistance reduces conduction losses. Supports a wide gate-source voltage tolerance for robust operation. Compact dimensions optimize circuit board space utilization.

This Infineon CoolMOS C6 MOSFET is ideal for industrial electronics, power conversion, motor drives, and other demanding electrical applications requiring high reliability and performance. The product is new and manufactured in compliance with industry standards. Explore more from Infineon and similar semiconductor devices on EnvMart.